Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Kotb, Jabeur"'
Autor:
Guillaume Prenat, Juergen Langer, Rajendra Bishnoi, Kevin Garello, Gilles Gaudin, Mehdi B. Tahoori, Gregory Di Pendina, Olivier Boulle, Marie-Claire Cyrille, Fabian Oboril, Mojtaba Ebrahimi, P. Vanhauwaert, Berthold Ocker, Nathalie Lamard, Kotb Jabeur, Pietro Gambardella
Publikováno v:
IEEE Transactions on Multi-Scale Computing Systems
IEEE Transactions on Multi-Scale Computing Systems, IEEE, 2016, 2 (1), pp.49-60. ⟨10.1109/TMSCS.2015.2509963⟩
IEEE Transactions on Multi-Scale Computing Systems, 2016, 2 (1), pp.49-60. ⟨10.1109/TMSCS.2015.2509963⟩
IEEE Transactions on Multi-Scale Computing Systems, IEEE, 2016, 2 (1), pp.49-60. ⟨10.1109/TMSCS.2015.2509963⟩
IEEE Transactions on Multi-Scale Computing Systems, 2016, 2 (1), pp.49-60. ⟨10.1109/TMSCS.2015.2509963⟩
International audience; This paper deals with a new MRAM technology whose writing scheme relies on the Spin Orbit Torque (SOT). Compared to Spin Transfer Torque (STT) MRAM, it offers a very fast switching, a quasi-infinite endurance and improves the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc7a89bc8d429f0eb99a3fde983430dd
https://doi.org/10.1109/tmscs.2015.2509963
https://doi.org/10.1109/tmscs.2015.2509963
Autor:
Rajendra Bishnoi, I. Firastrau, Gilles Sassatelli, A. Atitoaie, Pascal Nouet, Sarath Mohanachandran Nair, Abdoulaye Gamatié, Frédérick Mailly, Pascal Benoit, Sophiane Senni, Guillaume Prenat, Jad Mohdad, P. Vanhauwaert, Kotb Jabeur, Lionel Torres, Mehdi B. Tahoori, Frederic Ouattara, G. Di Pendina
Publikováno v:
21st Design, Automation & Test in Europe Conference & Exhibition
DATE: Design, Automation and Test in Europe
DATE: Design, Automation and Test in Europe, Mar 2018, Dresden, Germany. pp.931-936, ⟨10.23919/DATE.2018.8342143⟩
DATE
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition, Mar 2018, Dresden, Germany. pp.931-936, ⟨10.23919/DATE.2018.8342143⟩
DATE: Design, Automation and Test in Europe
DATE: Design, Automation and Test in Europe, Mar 2018, Dresden, Germany. pp.931-936, ⟨10.23919/DATE.2018.8342143⟩
DATE
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition
DATE 2018-21st Design, Automation and Test in Europe Conference and Exhibition, Mar 2018, Dresden, Germany. pp.931-936, ⟨10.23919/DATE.2018.8342143⟩
International audience; For monolithic heterogeneous integration, fast yet low-power processing and storage, and high integration density, the objective of the EU GREAT project is to co-integrate multiple digital and analog functions together within
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e26ac6b9d1d9b52ee2bf496e669af1a8
https://hal.archives-ouvertes.fr/hal-01864468
https://hal.archives-ouvertes.fr/hal-01864468
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, IEEE, 2015, 5, Issue: 1, pp.88-97. ⟨10.1109/JETCAS.2014.2374272⟩
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, IEEE, 2015, 5, Issue: 1, pp.88-97. ⟨10.1109/JETCAS.2014.2374272⟩
In this paper, we study the problem of mapping large applications onto hierarchical architectures based on novel nanodevices. We combine both intellectual property (IP) reuse and multi-level mapping concepts in order to cope with application complexi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48ecc514b07e9feccfadc9444a918947
https://doi.org/10.1109/jetcas.2014.2374272
https://doi.org/10.1109/jetcas.2014.2374272
Publikováno v:
Electrical and Electronics Engineering: An International Journal (ELELIJ)
Electrical and Electronics Engineering: An International Journal (ELELIJ), 2017, 6 (1), pp.1. ⟨10.14810/elelij.2017.6101⟩
Electrical and Electronics Engineering: An International Journal (ELELIJ), Wordpress, 2017, 6 (1), pp.1. ⟨10.14810/elelij.2017.6101⟩
Electrical and Electronics Engineering: An International Journal (ELELIJ), 2017, 6 (1), pp.1. ⟨10.14810/elelij.2017.6101⟩
Electrical and Electronics Engineering: An International Journal (ELELIJ), Wordpress, 2017, 6 (1), pp.1. ⟨10.14810/elelij.2017.6101⟩
International audience; Magnetic Random Access Memory (MRAM) is a promising candidate to be the universal non-volatile (NV) storage device. The Magnetic Tunnel Junction (MTJ) is the cornerstone of the NV-MRAM technology. 2-terminal MTJ based on Spin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6996b8a9f1fa2b88e6397bf61678d488
https://hal.science/hal-01977185
https://hal.science/hal-01977185
Autor:
Mehdi B. Tahoori, Sophiane Senni, Jad Mohdad, Kotb Jabeur, P. Vanhauwaert, Gregory Di Pendina, Frédérick Mailly, Guillaume Prenat, Martin Kreibig, Pascal Nouet, Sarath Mohanachandran Nair, Lionel Torres, Frank Ellinger, Pascal Benoit, Rui Ma, Rajendra Bishnoi
Publikováno v:
ISVLSI
2017 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
International Symposium on Very Large Scale Integration
ISVLSI: International Symposium on Very Large Scale Integration
ISVLSI: International Symposium on Very Large Scale Integration, Jul 2017, Bochum, Germany. pp.344-349, ⟨10.1109/ISVLSI.2017.67⟩
2017 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
International Symposium on Very Large Scale Integration
ISVLSI: International Symposium on Very Large Scale Integration
ISVLSI: International Symposium on Very Large Scale Integration, Jul 2017, Bochum, Germany. pp.344-349, ⟨10.1109/ISVLSI.2017.67⟩
International audience; To tackle the key issues of monolithic heterogeneous integration, fast yet low power processing, high integration density, fast yet low power storage, the goal of the GREAT project is to co-integrate multiple functions like se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70bfde3e347ffa59fc3931fce824e95e
https://doi.org/10.1109/isvlsi.2017.67
https://doi.org/10.1109/isvlsi.2017.67
Publikováno v:
Computer Science and Information Technology
Computer Science and Information Technology, 2017, 5 (3), pp.91. ⟨10.13189/csit.2017.050301⟩
Computer Science and Information Technology, HRPub, 2017, 5 (3), pp.91. ⟨10.13189/csit.2017.050301⟩
Computer Science and Information Technology, 2017, 5 (3), pp.91. ⟨10.13189/csit.2017.050301⟩
Computer Science and Information Technology, HRPub, 2017, 5 (3), pp.91. ⟨10.13189/csit.2017.050301⟩
International audience; Spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is an emergent spintronics device with a promising potential. It resolves many issues encountered in the current MTJs state of the art. Although the existing Spin Transfer T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a276cb9e6c9230ba4294b91c58fa9335
https://hal.science/hal-01977160/file/Conf_2_Antaliya.pdf
https://hal.science/hal-01977160/file/Conf_2_Antaliya.pdf
Autor:
Guillaume Prenat, Kotb Jabeur
Publikováno v:
MATEC Web of Conferences, Vol 125, p 01003 (2017)
In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy. Thus, new device tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d497505bce050bd3f898517225a33bd
https://doaj.org/article/5320a3587036400097c43f0b5cd4709f
https://doaj.org/article/5320a3587036400097c43f0b5cd4709f
Autor:
Fabian Oboril, Rajendra Bishnoi, Mojtaba Ebrahimi, Tahoori, Mehdi B., Gregory DI PENDINA, Kotb Jabeur, Guillaune Prenat
Publikováno v:
W07 International Workshop on Emerging Memory Solutions-DATE 2016
W07 International Workshop on Emerging Memory Solutions-DATE 2016, Mar 2016, Dresden, Germany
HAL
W07 International Workshop on Emerging Memory Solutions-DATE 2016, Mar 2016, Dresden, Germany
HAL
Magnetic spin-based memory technologies are a promising solution to overcome the incoming limits of microelectronics. Nevertheless, the long write latency and high write energy of these memory technologies compared to SRAM make it difficult to use th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2df9b71b3cad0c70cdb02d1e8b25f590
https://hal.archives-ouvertes.fr/hal-01864483
https://hal.archives-ouvertes.fr/hal-01864483
Autor:
Guillaume Prenat, Christophe Layer, Pierre Paoli, Virgile Javerliac, Bernard Dieny, Gregory Di Pendina, Laurent Becker, Loic Decloedt, Kotb Jabeur, Sylvain Claireux, Stéphane Gros, Fabrice Bernard-Granger
Publikováno v:
ACM Journal on Emerging Technologies in Computing Systems
ACM Journal on Emerging Technologies in Computing Systems, Association for Computing Machinery, 2016, 12 (4), pp.1-24. ⟨10.1145/2876507⟩
ACM Journal on Emerging Technologies in Computing Systems, 2016, 12 (4), pp.1-24. ⟨10.1145/2876507⟩
ACM Journal on Emerging Technologies in Computing Systems, Association for Computing Machinery, 2016, 12 (4), pp.1-24. ⟨10.1145/2876507⟩
ACM Journal on Emerging Technologies in Computing Systems, 2016, 12 (4), pp.1-24. ⟨10.1145/2876507⟩
International audience; The most widely used embedded memory technology, SRAM (Static Random Access Memory), is heading towards scaling problems in advanced technology nodes, due to the leakage currents caused by the quantum tunneling effect. As an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68f2901e66579317338204634a2271b4
https://hal.archives-ouvertes.fr/hal-01835848
https://hal.archives-ouvertes.fr/hal-01835848
Publikováno v:
Electronics Letters. 50:585-587
The spin-orbit-torque magnetic tunnel junction (SOT-MTJ) is a promising device for data storage. Most of the issues encountered with scalable spin transfer-torque (STT) devices are visibly moved. Thanks to a three-terminal architecture, the reliabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb2db76a4e367774102b35a72a04d5ab
https://doi.org/10.1049/el.2014.0372
https://doi.org/10.1049/el.2014.0372