Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Kotaro Maruyama"'
Autor:
Benjamin D. Bunday, Shari Klotzkin, Douglas Patriarche, Yvette Ball, Maseeh Mukhtar, Kotaro Maruyama, Seul-Ki Kang, Yuichiro Yamazaki
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69dec9b17e6b214e4129c4a7055b3c9
https://doi.org/10.1117/12.2661179
https://doi.org/10.1117/12.2661179
Advanced high-voltage e-beam system combined with an enhanced D2DB for on-device overlay measurement
Autor:
Seul-Ki Kang, Kotaro Maruyama, Yuichiro Yamazaki, Matteo Beggiato, Anabela Veloso, Gian Francesco Lorusso
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a5815540bf538fd390ce3f914c346bc
https://doi.org/10.1117/12.2661180
https://doi.org/10.1117/12.2661180
Autor:
Shinichi Nakazawa, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Gong-Hwan Kim, Domingo Choi
Publikováno v:
Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff35789282cf01b0389bffa2cd522d3d
https://doi.org/10.1117/12.2640526
https://doi.org/10.1117/12.2640526
Autor:
Taihei Mori, Yosuke Okamoto, Masahiro Oya, Shinji Mizutani, Shinichi Nakazawa, Kotaro Maruyama, Yuichiro Yamazaki
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb362c33e83c470b058d5efa0d70373f
https://doi.org/10.1117/12.2615750
https://doi.org/10.1117/12.2615750
Autor:
Benjamin D. Bunday, Shari Klotzkin, Douglas Patriarche, Maseeh Mukhtar, Kotaro Maruyama, Seul-Ki Kang, Yuichiro Yamazaki
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ce0aa16c4dfdb4ff1f2276343b6cf90
https://doi.org/10.1117/12.2615753
https://doi.org/10.1117/12.2615753
Autor:
Seul-ki Kang, Yuji Miura, Kotaro Maruyama, Yuichiro Yamazaki, Chih-I Wei, Ethan Macguire, Germain Fenger, Peter De Bisschop, Sayantan Das, Sandip Halder, Gian Lorusso
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2486adb33fa831041cf9fc9cc4281ab
https://doi.org/10.1117/12.2615955
https://doi.org/10.1117/12.2615955
Autor:
Taihei Mori, Shinichi Nakazawa, Yuichiro Yamazaki, Seulki Kang, Yosuke Okamoto, Kotaro Maruyama, Akinori Kawamura
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
The precise metrology for edge placement error (EPE) is required especially in EUV era. Last year, we proposed new contour extraction algorithm using machine learning and verified the robustness to SEM noise on AEI pattern. In this study, we suggest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee384be15a79f9f2ae2477a7b1e30755
https://doi.org/10.1117/12.2584709
https://doi.org/10.1117/12.2584709
Autor:
Danilo De Simone, Sandip Halder, Paulina Rincon-Delgadillo, Yuichiro Yamazaki, Andreas Frommhold, Gian Lorusso, Philippe Leray, Sayantan Das, Seulki Kang, Kotaro Maruyama
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
In the extreme ultraviolet (EUV) lithography process, stochastic defects are randomly generated and can have a significant impact on the yield of high-volume manufacturing (HVM) when printed even at an extremely low probability down to parts per tril
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d13b2dadf9c76c2e940c50ac4c330e79
https://doi.org/10.1117/12.2584696
https://doi.org/10.1117/12.2584696
Autor:
Sandip Halder, Ir Kusnadi, Germain Fenger, Yunfei Deng, Gian Lorusso, Yosuke Okamoto, Yuichiro Yamazaki, Stewart Wu, Seulki Kang, Sayantan Das, Kotaro Maruyama, Gurdaman Khaira, Chih-I Wei, Werner Gillijns
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
A method to perform Optical Proximity Correction (OPC) model calibration that is also sensitive to lithography failure modes and takes advantage of the large field of view (LFoV) e-beam inspection, is presented. To improve the coverage of the OPC mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5022c7fb3d6a4a02d325008a889eeb4f
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
At sub10nm nodes of Backend of Line (BEOL) using Extreme Ultraviolet Lithography (EUVL), the requirements of the process window of patterning are extremely tight for parameters such as Critical Dimension (CD) and Overlay which are traditionally manag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5317549712771bfdb9f91b7a3e04d5ed
https://doi.org/10.1117/12.2554543
https://doi.org/10.1117/12.2554543