Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Kosuke Tahara"'
Autor:
Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi
Publikováno v:
Applied Physics Express, Vol 17, Iss 5, p 051004 (2024)
We report on an approach to produce single photon emitters at the SiO _2 /SiC interface. We form a high-quality SiO _2 /SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to gener
Externí odkaz:
https://doaj.org/article/5947fac675eb48b79caed29d77a0446f
Publikováno v:
IEEE Transactions on Power Electronics. 36:1366-1375
This article presents a multiport, bidirectional, contactless connector based on the inductive power-transfer technology. The unique structure of the axially gapped cylindrical core facilitates the proposed contactless connector to control the output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::632ecc4111a67109cc0fa9738f5de804
https://doi.org/10.1109/tpel.2020.3009947
https://doi.org/10.1109/tpel.2020.3009947
Publikováno v:
ITSC
The major challenges for electric vehicle deployment include the prohibitive battery cost and a large amount of time required for energy refueling. Although the concept of battery swapping can solve the latter problem, it is difficult to overcome the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c70dd2b438e83c4bd0fe24a755e0527b
https://doi.org/10.1109/itsc45102.2020.9294582
https://doi.org/10.1109/itsc45102.2020.9294582
Autor:
Daisuke Takeuchi, Satoshi Yamasaki, Takayuki Iwasaki, Wataru Naruki, Mutsuko Hatano, Masahiko Ogura, Kosuke Tahara, Toshiharu Makino, Hiromitsu Kato
Publikováno v:
ACS Nano. 11:1238-1245
The electric field inside semiconductor devices is a key physical parameter that determines the properties of the devices. However, techniques based on scanning probe microscopy are limited to sensing at the surface only. Here, we demonstrate the dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b46302347e43a7270ea41cb698fa490
https://doi.org/10.1021/acsnano.6b04460
https://doi.org/10.1021/acsnano.6b04460
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper proposes time synchronization and an encoding technology for controlling the gate signals of a contactless power transfer system. Contactless bi-directional power transfer is controlled using 50-Mbps near field electromagnetic coupling com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97b9a69ac13fd7c6ae6e6acc9789f73
https://doi.org/10.1109/ecce.2019.8911835
https://doi.org/10.1109/ecce.2019.8911835
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper proposes a multi-port, bidirectional contactless connector based on the inductive power transfer technology. Owing to the unique structure of the axial gapped cylindrical core, the proposed contactless connector can control the output of m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e85f5dc9be4e69343fa62ece929a7cff
https://doi.org/10.1109/ecce.2019.8911846
https://doi.org/10.1109/ecce.2019.8911846
Autor:
Hiromitsu Kato, Hasegawa Junichi, Wataru Naruki, Mutsuko Hatano, Kosuke Tahara, Satoshi Yamasaki, Takayuki Iwasaki, Mitsuaki Shimizu, Toshiharu Makino
Publikováno v:
Diamond and Related Materials. 63:192-196
Charge state control of the nitrogen vacancy center (NV center) in diamond is important to the realization of applications such as magnetometers or quantum information processing, because only negatively charged NV centers have attractive spin proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04bc539c03533eed9328cf203e293a3a
https://doi.org/10.1016/j.diamond.2015.10.022
https://doi.org/10.1016/j.diamond.2015.10.022
Publikováno v:
The Proceedings of Design & Systems Conference. :1502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::987d91400b9d859fe28ebc4c577af16e
https://doi.org/10.1299/jsmedsd.2020.30.1502
https://doi.org/10.1299/jsmedsd.2020.30.1502
Autor:
R. Nagumo, Kota Saichi, Takayuki Iwasaki, Takashi Yatsui, Mutsuko Hatano, Kosuke Tahara, Fedor Jelezko, Ryuji Igarashi, Felix Julian Brandenburg
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
The nitrogen-vacancy (NV) centre in diamond is a promising candidate for quantum computing applications and magnetic sensing applications, because it is an atomic-scale defect with stable coherence time (T2) and reliable accessibility at room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67e2863b5d5e72364c3f09ff4d12455d
https://doi.org/10.1038/s41598-018-34158-4
https://doi.org/10.1038/s41598-018-34158-4
Autor:
Hitoshi Ishiwata, Kosuke Tahara, Mutsuko Hatano, Takayuki Iwasaki, Hayato Ozawa, Makoto Nakajima
We report the formation of perfectly aligned, high-density, shallow nitrogen vacancy (NV) centers on the ($111$) surface of a diamond. The study involved step-flow growth with a high flux of nitrogen during chemical vapor deposition (CVD) growth, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab33a710c40193c8dc61b80e603eac87
http://arxiv.org/abs/1704.03642
http://arxiv.org/abs/1704.03642
