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pro vyhledávání: '"Kostamovaara, Juha Tapio"'
Autor:
Jahromi, Sahba, Jansson, J-P, P. Keränen, P., Avrutin, Evgeny, Ryvkin, B.S., Kostamovaara, Juha Tapio
A laser diode illuminator for single photon detection (SPAD) based pulsed time-of-flight 3-D range imaging is presented. The illuminator supports the block-based illumination scheme. It consists of a 16-element custom designed common anode quantum-we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::246ef24eaca2803e5d2c8326c94be4d8
https://eprints.whiterose.ac.uk/176327/6/Block_based_Illuminator_for_3D.pdf
https://eprints.whiterose.ac.uk/176327/6/Block_based_Illuminator_for_3D.pdf
It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer, located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (<
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::edf8a3dfde1728be03db0ae49c83d67a
https://eprints.whiterose.ac.uk/173093/1/ote2.12033.pdf
https://eprints.whiterose.ac.uk/173093/1/ote2.12033.pdf
It is shown, by calculations calibrated against the authors’ recent experimental data, that an eye-safe wavelength range InGaAsP/InP high pulsed power laser design using a bulk active layer, which has a large refractive index step with respect to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::9b4a45ef34dd80366b17eb4e1c778322
https://eprints.whiterose.ac.uk/160581/8/Ryvkin_2020_Semicond._Sci._Technol._35_085008.pdf
https://eprints.whiterose.ac.uk/160581/8/Ryvkin_2020_Semicond._Sci._Technol._35_085008.pdf
Autor:
Hallman, Lauri, Ryvkin, Boris, Avrutin, Eugene, Aho, Antti, Viheriälä, Jukka, Guina, Mircea, Kostamovaara, Juha Tapio
We report first experimental results on a high- power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 μm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e2553418a32c613aa4ecc392b391dc49
https://eprints.whiterose.ac.uk/151375/1/Hallman_et_al_PTL_IEEE_format_revised_f1.docx
https://eprints.whiterose.ac.uk/151375/1/Hallman_et_al_PTL_IEEE_format_revised_f1.docx
We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III-V semiconductor lasers. The effect is particularly pronounced in devices operatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::b171d4bb393fca09ad7a731e249caf19
https://eprints.whiterose.ac.uk/140199/1/Paper_SST_104807_revised_after_acceptance.docx
https://eprints.whiterose.ac.uk/140199/1/Paper_SST_104807_revised_after_acceptance.docx
Akademický článek
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—An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::65b484d7d13644474c302d6c15ab5864
https://eprints.whiterose.ac.uk/123872/1/Paper_2017_SST_format_final_unmarked.pdf
https://eprints.whiterose.ac.uk/123872/1/Paper_2017_SST_format_final_unmarked.pdf
Akademický článek
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Akademický článek
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Publikováno v:
IEEE Transactions on Instrumentation & Measurement. Oct97, Vol. 46 Issue 5, p1133. 4p. 3 Black and White Photographs, 1 Diagram, 2 Charts, 2 Graphs.
