Výsledky vyhledávání - "Kostamovaara, J."

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Akademický článek

Aortic and arterial stiffness determination by photoplethysmographic technique

Autor: Huotari, M., Yliaska, N., Lantto (emer), V., Määttä, K., Kostamovaara, J.

Publikováno v: In Procedia Chemistry September 2009 1(1):1243-1246

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Solid-state block-based pulsed laser illuminator for single-photon avalanche diode detection-based time-of-flight 3D range imaging

Autor: Jahromi, S. S. (Sahba S.), Jansson, J.-P. (Jussi-Pekka), Keränen, P. (Pekka), Avrutin, E. A. (Eugene A.), Ryvkin, B. S. (Boris S.), Kostamovaara, J. T. (Juha T.)

A laser diode illuminator for single-photon avalanche diode detection-based pulsed time-of-flight 3D range imaging is presented. The illuminator supports a block-based illumination scheme and consists of a 16-element custom-designed common anode quan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2423::72e22ce9c6387202f302843e08d7d58b
http://urn.fi/urn:nbn:fi-fe2021081343204

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>25 W pulses from 1.5 µm double-asymmetric waveguide, 100 µm stripe laser diode with bulk active layer

Autor: Hallman, L. W. (L. W.), Ryvkin, B. S. (B. S.), Avrutin, E. A. (E. A.), Kostamovaara, J. T. (J. T.)

The experimental characterization of a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 𝜇m), with an asymmetric waveguide structure, a 100 𝜇m wide stripe, and a bulk active layer positioned v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2423::a718250c4a3440e9e0acb5902f049a9b
http://urn.fi/urn:nbn:fi-fe2022013111296

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AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission

Autor: Avrutin, E. A. (Eugene A.), Ryvkin, B. S. (Boris S.), Kostamovaara, J. T. (Juha T.)

It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer (AL), located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-waveleng

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2423::2b2ece7e0645511321790763691c0c63
http://urn.fi/urn:nbn:fi-fe2021090745285

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Time-domain terahertz imaging of layered dielectric structures with interferometry-enhanced sensitivity

Autor: Mikhnev, V. A. (Valeri A.), Vainshtein, S. N. (Sergey N.), Kostamovaara, J. T. (Juha T.)

This article presents a time-domain imaging technique for layered dielectric slabs using a solid-state wavelet generator with subterahertz carrier frequency. The technique utilizes the dual nature of a wavelet, i.e., both the applicability of time-of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2423::c9534b3368ae3152af7ad5f0dc254afc
http://urn.fi/urn:nbn:fi-fe2020111891005

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Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes

Autor: Ryvkin, B. S. (Boris S.), Avrutin, E. A. (Eugene A.), Kostamovaara, J. T. (Juha T.)

It is shown, by calculations calibrated against the authors’ recent experimental data, that an eye-safe wavelength range InGaAsP/InP high pulsed power laser design using a bulk active layer, which has a large refractive index step with respect to t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2423::27beaed69f4a31b7c5a28ae694bbc52e
http://urn.fi/urn:nbn:fi-fe2020091869989

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A 32 x 128 SPAD-257 TDC receiver IC for pulsed TOF solid-state 3-D imaging

Autor: Jahromi, S. (Sahba), Jansson, J.-P. (Jussi-Pekka), Keränen, P. (Pekka), Kostamovaara, J. (Juha)

A single-chip receiver for pulsed laser direct time-of-flight 3-D imaging applications has been realized in a 0.35-μm HV CMOS technology. The chip includes a 32 x 128 single-photon avalanche diode (SPAD) array [35% fill factor (FF)] and 257 time-to-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2423::af55516451a751c1f98f183fce649497
http://urn.fi/urn:nbn:fi-fe2020050825689

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High power 1.5 μm pulsed semiconductor laser design with a bulk active layer and an asymmetric waveguide

Autor: Ryvkin, B. S. (Boris S.), Avrutin, E. A. (Eugene A.), Hallman, L. W. (Lauri W.), Kostamovaara, J. T. (Juha T.)

InGaAsP/InP high pulsed power lasers operating in the range of 1.3–1.6 μm have been intensely studied recently, with LIDAR technology being the primary application. We present and analyse a design with a bulk active layer which has a large refract

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2423::70cbad000f0254d5778d71fbc72da019
http://urn.fi/urn:nbn:fi-fe2020111890942

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