Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Koshi Ando"'
Publikováno v:
Journal of the Society of Materials Science, Japan. 67:834-839
Autor:
Keita Tanaka, Hirofumi Kasada, Kunio Ichino, Tomoki Abe, Koshi Ando, Takanobu Fujisawa, Kazuaki Akaiwa, Shigeto Uchida
Publikováno v:
Journal of Electronic Materials. 47:4385-4387
We investigated device degradation in PEDOT:PSS/ZnSSe organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). ZnSSe/n-GaAs wafers were grown by molecular beam epitaxy, and PEDOT:PSS window layers were formed by inkjet technique. We ob
Autor:
Kunio Ichino, Ryoichi Inoue, Tomoki Abe, Shigeto Uchida, Takeru Fujimoto, Koshi Ando, Kenta Tanaka, Hirofumi Kasada
Publikováno v:
physica status solidi c. 13:677-682
Recently, we have developed organic (PEDOT:PSS)–inorganic (ZnSSe) hybrid avalanche photodiode (APD) with long life time and its array. In this article, we review the development of the organic–inorganic hybrid-type ZnSe-based UV-APDs array. We us
Autor:
Kunio Ichino, Tomoki Abe, Masaya Yamamoto, Atsushi Yamamoto, Hirofumi Kasada, Koshi Ando, Shohei Iwagashita, Tatsuya Motoyama
Publikováno v:
physica status solidi c. 13:602-605
We have investigated quantum confined Stark effects of polar (O-polar) and non-polar ZnO/ZnMgO quantum wells (QWs) by electroabsorption (EA) spectroscopy. The ZnO/ZnMgO QWs were grown by plasma assisted molecular beam epitaxy (PA-MBE). The ZnO/ZnMgO
Autor:
Tomoki Abe, A. Akiyama, T. Masamoto, T. Maejima, Koshi Ando, T. Matsuo, K. Noda, S. Hiroe, R. Natsume, Hirofumi Kasada, Y. Harada, T. Yukue
Publikováno v:
physica status solidi c. 11:1353-1356
We have performed homoepitaxial MBE growth of nitrogen (N) -doped ZnO and studied the postanneal effect on electrical conduction properties. A rapid postanneal after MBE growth is found to enhance the donor–acceptor (D–A) pair emission intensity,
Autor:
Kenta Tanaka, Akio Tazue, Tomoki Abe, Ryoichi Inoue, Noriyuki Ikadatsu, Masahiro Ebisu, Takeru Fujimoto, Yusuke Inagaki, Koshi Ando, Hirofumi Kasada
Publikováno v:
physica status solidi c. 11:1300-1303
We have developed organic-inorganic hybrid avalanche photodiode (APD) with conducting polymer as a window layer on ZnSSe/n-GaAs wafers. APD wafers used in this study were grown by molecular beam epitaxy (MBE). We used PEDOT:PSS as hole-transport cond
Publikováno v:
physica status solidi c. 9:1844-1847
We have studied the cause of shortened lifetime and reduced brightness of wide-gap semiconductor LEDs, and found that generation/enhancement of microscopic point defects have strong association with device lifetime. A pulse-drive technology controlli
Publikováno v:
physica status solidi c. 9:1801-1804
We have investigated external electric field dependent Stark effects of ZnO thin film and ZnO/ZnMgO QWs by electroreflectance (ER) spectroscopy to develop electroabsorption modulators. The ZnO single film and ZnO/ZnMgO QWs were grown by plasma-assist
Autor:
Hirofumi Kasada, Nor Ayuni, Tomoki Abe, Tomoyuki Shimizu, Yusuke Inagaki, Koshi Ando, Masashi Otsuki, Masahiro Ebisu
Publikováno v:
physica status solidi c. 9:1852-1855
We have developed new organic (PEDOT:PSS)-inorganic (ZnSSe) hybrid structure avalanche photodiodes (APDs). The device wafers are grown by MBE on n-GaAs substrates, and PEDOT:PSS is formed by spin-coating method on the semiconductor ZnSSe layers. We r
Autor:
Tomoki Abe, Hirofumi Kasada, K. Fujino, K. Enomoto, Y. Yamazaki, H. Nakamura, T. Ohno, Y. Ishihara, J. Yoshikawa, Koshi Ando, T. Taya
Publikováno v:
physica status solidi (b). 247:1453-1456
Unique properties of the N-acceptor in homo- and hetero-epitaxially grown ZnO by molecular beam epitaxy (MBE) are studied by means of microproving of surface sheet-resistance, Hall-effect measurement, persistent photoconduction (PPC) and thermally st