Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kosei Nei"'
Autor:
Takayuki Ikeda, Takashi Nakagawa, Yutaka Okazaki, Shogo Uesaka, Hideaki Shishido, Shunpei Yamazaki, Shuichi Katsui, Hidetomo Kobayashi, Takaaki Nagata, Ryohei Yamaoka, Tomoya Aoyama, Kosei Nei, Yuki Tamatsukuri
Publikováno v:
Journal of the Society for Information Display. 27:497-506
Autor:
Shiho Nomura, Kimura Kiyotaka, Kosei Nei, Shunpei Yamazaki, Masumi Nomura, Takayuki Ikeda, Sho Kato, Tomoya Aoyama, Takeya Hirose, Yutaka Okazaki, Hideaki Shishido
Publikováno v:
SID Symposium Digest of Technical Papers. 50:315-318
Autor:
Shogo Uesaka, Shunpei Yamazaki, Takashi Nakagawa, Yuki Tamatsukuri, Kosei Nei, Ryohei Yamaoka, Takayuki Ikeda, Yutaka Okazaki, Hideaki Shishido, Hidetomo Kobayashi, Tomoya Aoyama, Takaaki Nagata, Shuichi Katsui
Publikováno v:
SID Symposium Digest of Technical Papers. 50:311-314
Autor:
Kosei Noda, Tatsuya Onuki, Masahiro Fujita, Kazuaki Ohshima, Masahiro Goshima, Shunpei Yamazaki, Takuro Ohmaru, Naoaki Tsutsui, Takanori Matsuzaki, Wataru Uesugi, Hikaru Tamura, Kosei Nei, Atsuo Isobe, Yutaka Shionoiri, Kiyoshi Kato, Tomoaki Atsumi, Gensuke Goto, Katsuaki Tochibayashi, Takahiko Ishizu, Jun Koyama
Publikováno v:
2014 IEEE 6th International Memory Workshop (IMW).
SRAM with backup circuits using a crystalline oxide semiconductor (OS) (e.g., a c-axis aligned crystalline oxide semiconductor (CAAC-OS) typified by CAAC In-Ga-Zn oxide (CAAC-IGZO)) is reported. Results of cell-level simulation based on 45-nm Si/100-
Autor:
Yoshinori Ando, Takashi Okuda, Kiyoshi Kato, Hiroki Inoue, Shuhei Nagatsuka, Kosei Nei, Yutaka Shionoiri, Tomoaki Atsumi, Shunpei Yamazaki, Takahiko Ishizu, Hidekazu Miyairi, Takanori Matsuzaki, Jun Koyama, Tatsuya Onuki
Publikováno v:
2013 5th IEEE International Memory Workshop.
A 3bit/cell nonvolatile oxide semiconductor RAM (NOSRAM) test die comprising c-axis aligned crystal In-Ga-Zn-O TFTs has been fabricated. The write time of the test die is 100 ns. The test die collectively reads multilevel data within 900 ns with a 3b