Excitation Intensity Dependence of Photoluminescence Blinking in CsPbBr3 Perovskite Nanocrystals

Autor: Gibson, NA, Koscher, BA, Alivisatos, AP, Leone, SR

Publikováno v: The Journal of Physical Chemistry C, vol 122, iss 22
Journal of Physical Chemistry C, vol 122, iss 22

Perovskite semiconductors have emerged as a promising class of materials for optoelectronic applications. Their favorable device performances can be partly justified by the defect tolerance that originates from their electronic structure. The effect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1589ae0143d48282b9e3f2b9cf2fa1c7
https://escholarship.org/uc/item/583864g1

Autonomous, multiproperty-driven molecular discovery: From predictions to measurements and back.

Autor: Koscher BA; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Canty RB; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., McDonald MA; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Greenman KP; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., McGill CJ; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Bilodeau CL; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Jin W; Broad Institute of MIT and Harvard, Cambridge, MA, USA., Wu H; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Vermeire FH; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Jin B; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Hart T; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Kulesza T; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Li SC; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Jaakkola TS; Computer Science and Artificial Intelligence Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA., Barzilay R; Computer Science and Artificial Intelligence Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA., Gómez-Bombarelli R; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Green WH; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Jensen KF; Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.

Publikováno v: Science (New York, N.Y.) [Science] 2023 Dec 22; Vol. 382 (6677), pp. eadi1407. Date of Electronic Publication: 2023 Dec 22.

Dynamic lattice distortions driven by surface trapping in semiconductor nanocrystals.

Autor: Guzelturk B; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA. burakg@anl.gov.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA. burakg@anl.gov.; X-ray Science Division, Argonne National Laboratory, Lemont, IL, USA. burakg@anl.gov., Cotts BL; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA., Jasrasaria D; Department of Chemistry, University of California, Berkeley, CA, USA., Philbin JP; Department of Chemistry, University of California, Berkeley, CA, USA., Hanifi DA; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA.; Department of Chemistry, University of California, Berkeley, CA, USA., Koscher BA; Department of Chemistry, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Balan AD; Department of Chemistry, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Curling E; Department of Chemistry, University of California, Berkeley, CA, USA., Zajac M; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA., Park S; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Yazdani N; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.; Department of Information Technology and Electrical Engineering, ETH Zurich, Zurich, Switzerland., Nyby C; The PULSE Institute for Ultrafast Energy Science, SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Kamysbayev V; Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA., Fischer S; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA., Nett Z; Department of Chemistry, University of California, Berkeley, CA, USA., Shen X; SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Kozina ME; SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Lin MF; SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Reid AH; SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Weathersby SP; SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Schaller RD; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA.; Department of Chemistry, Northwestern University, Evanston, IL, USA., Wood V; Department of Information Technology and Electrical Engineering, ETH Zurich, Zurich, Switzerland., Wang X; SLAC National Accelerator Laboratory, Menlo Park, CA, USA., Dionne JA; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA., Talapin DV; Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL, USA.; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA., Alivisatos AP; Department of Chemistry, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.; Kavli Energy NanoScience Institute, Berkeley, CA, USA., Salleo A; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA., Rabani E; Department of Chemistry, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, Israel., Lindenberg AM; Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA. aaronl@stanford.edu.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA. aaronl@stanford.edu.; The PULSE Institute for Ultrafast Energy Science, SLAC National Accelerator Laboratory, Menlo Park, CA, USA. aaronl@stanford.edu.; Department of Photon Science, Stanford University and SLAC National Accelerator Laboratory, Menlo Park, CA, USA. aaronl@stanford.edu.

Publikováno v: Nature communications [Nat Commun] 2021 Mar 25; Vol. 12 (1), pp. 1860. Date of Electronic Publication: 2021 Mar 25.

The Underlying Chemical Mechanism of Selective Chemical Etching in CsPbBr 3 Nanocrystals for Reliably Accessing Near-Unity Emitters.

Autor: Koscher BA; Department of Chemistry , University of California , Berkeley , California 94720 , United States.; Materials Science Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.; Kavli Energy NanoScience Institute , Berkeley , California 94720 , United States., Nett Z; Department of Chemistry , University of California , Berkeley , California 94720 , United States.; Materials Science Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.; Kavli Energy NanoScience Institute , Berkeley , California 94720 , United States., Alivisatos AP; Department of Chemistry , University of California , Berkeley , California 94720 , United States.; Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States.; Materials Science Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.; Kavli Energy NanoScience Institute , Berkeley , California 94720 , United States.

Publikováno v: ACS nano [ACS Nano] 2019 Oct 22; Vol. 13 (10), pp. 11825-11833. Date of Electronic Publication: 2019 Oct 04.

Design Principles for Trap-Free CsPbX 3 Nanocrystals: Enumerating and Eliminating Surface Halide Vacancies with Softer Lewis Bases.

Autor: Nenon DP; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States., Pressler K, Kang J; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States., Koscher BA; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States., Olshansky JH; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States., Osowiecki WT; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States., Koc MA; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States., Wang LW; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States., Alivisatos AP; Material Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.; Kavli Energy NanoScience Institute , Berkeley , California 94720 , United States.

Publikováno v: Journal of the American Chemical Society [J Am Chem Soc] 2018 Dec 19; Vol. 140 (50), pp. 17760-17772. Date of Electronic Publication: 2018 Dec 05.