Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Kortan Ogutman"'
Publikováno v:
Solar Energy Materials and Solar Cells. 179:31-35
An image-processing method combined with Fourier analysis is introduced in this work as a rapid and highly-automated method of detecting rear contact voids in passivated emitter and rear contact cells (PERC). This approach utilizes photoluminescence
Publikováno v:
Solar Energy. 158:869-874
An alternative method to image essential variables like dark saturation current density, series resistance, and cell efficiency is introduced in this work. This approach combines the terminally connected diode model with a modified technique for extr
Publikováno v:
IEEE Journal of Photovoltaics. 7:957-965
The development of ultrafast quantum efficiency measurements has made it possible to perform spatially resolved short-circuit current mapping on large area crystalline silicon solar cells. With the inclusion of concurrent diffuse reflectance measurem
Autor:
Kristopher O. Davis, Geoffrey Gregory, Nafis Iqbal, Emanuele Cornagliotti, Michael Haslinger, Winston V. Schoenfeld, Kortan Ogutman, Mengjie Li, Joachim John
Publikováno v:
physica status solidi (a). 217:2000348
Autor:
Joachim John, Emanuele Cornagliotti, Kristopher O. Davis, Kortan Ogutman, Winston V. Schoenfeld, Sofie Robert, Michael Haslinger
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Tunneling aluminum oxide (Al2O3) layers are proposed as a candidate for hole collecting passivated contacts. These ultra-thin Al2O3 films ($\approx 1.5\text{nm}$) are deposited on boron diffused ($113\Omega/\square$) hydrophilic surfaces to act as me
Autor:
Winston V. Schoenfeld, Malcolm Abbott, Ben A. Sudbury, Kristopher O. Davis, Kortan Ogutman, Keith R. McIntosh, Eric Schneller
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
In this work, we present a transparent and relatively simple method of calculating the economic viability of a given metrology technique using a case study in crystalline silicon photovoltaic (PV) cell manufacturing. The case study used here is the i
Autor:
Leonid A. Vasilyev, Eric Schneller, Kristopher O. Davis, Richard K. Ahrenkiel, Joshua B. Gallon, Kyle B. Lu, Kortan Ogutman, Greg S. Horner, Terry B. Rigdon, Antonius B. Dirriwachter
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
In this work, we introduce electroluminescence excitation spectroscopy (ELE) as a non-contact proxy for extracting the quantum efficiency (QE) of a photovoltaic (PV) cell. This method differs from photoluminescence excitation (PLE) by physically sepa
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Although EL images of modules with cracked cells may initially show no sign of power loss; closed cracks tend to progressively open up in the field, causing various levels of power loss revealed in the various shades of regions bound by cracks. This
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
IQE data has long been a key analysis tool for c-Si cell research. Transitioning from single point measurements to spatially resolved measurements allows for the detailed analysis of quality and uniformity of the processes and materials used in cell
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Equivalent circuit models are often applied to experimental current-voltage (I-V) data of solar cells to quantify key features of device performance. The appropriate model to use is heavily dependent on the device architecture and the properties of e