Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Korinets S. V."'
Autor:
Reva V. P., Korinets S. V., Golenkov A. G., Sapon S. V., Torchinsky A. M., Zabudsky V. V., Sizov F. F.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 9-14 (2018)
The sensitivity and basic electrical characteristics of the developed direct illumination matrices with charge-coupled devices and electronic multiplication were investigated at room temperatures and low illumination. Photomatrices of 576×288 and 64
Externí odkaz:
https://doaj.org/article/77e12de1ede04889bc2fb5a06e71cb2a
Autor:
Reva V. P., Korinets S. V., Golenkov A. G., Sapon S. V., Torchinsky A. M., Zabudsky V. V., Sizov F. F.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 33-37 (2017)
Electron multiplication charge coupled devices (EMCCD) technology is an innovation first introduced slightly more than a decade ago. The EMCCD is an image sensor that is capable of detecting an isolated photon without an image intensifier. It is achi
Externí odkaz:
https://doaj.org/article/7673daa3239f45cf99ce5d794aedfe4f
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 25-28 (2011)
The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the paramete
Externí odkaz:
https://doaj.org/article/79f0448ca67c4b20992fe7e9626c1eac
Autor:
Reva V. P., Golenkov A. G., Zabudskiy V. V., Korinets S. V., Tsybriy Z. F., Gumenjuk-Sichevska J. V., Bunchuk S. G., Apatskaya M. V., Lysiuk I. А., Smoliy М. I.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 24-28 (2010)
The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of
Externí odkaz:
https://doaj.org/article/06341c0f2da641a6be391d3f07d303af
Autor:
Golenkov, A. G., Shevchik-Shekera, A. V., Kovbasa, M. Yu., Lysiuk, I. O., Vuichyk, M. V., Korinets, S. V., Bunchuk, S. G., Dukhnin, S. E., Reva, V. P., Sizov, F. F.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2021, Vol. 24 Issue 1, p90-99, 10p
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