Initial and degraded performance of thin film CdTe solar cell devices as a function of copper at the back contact

Autor: Korevaar, B.A., Shuba, R., Yakimov, A., Cao, H., Rojo, J.C., Tolliver, T.R.

Publikováno v: In Thin Solid Films 2011 519(21):7160-7163

Influence of Annealing on Performance for Hetero-Junction a-Si/c-Si Devices

Autor: Korevaar, B.A., Fronheiser, J.A., Zhang, X., Fedor, L.M., Tolliver, T.R.

23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1859-1862
The passivation of the crystalline silicon surface is directly related to the open circuit voltage for the hetero-junction a-Si/c-S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d1757e897a327f1018591128600eb6c

Integration of expanding thermal plasma deposited hydrogenated amorphous silicon in solar cells

Autor: Korevaar, B.A.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::de81714bd64ee5cddde09933a77fc1e0
https://research.tue.nl/nl/publications/48d6e857-d63e-4920-9055-ed23435f4aa2

Buffer layers for improving the cell permormance of hydrogenated amorphous silicon solar cells deposited with an expanding thermal plasma

Autor: Korevaar, B.A., Smit, C., Swaaij, van, R.A.C.M.M., Schram, D.C.

Publikováno v: MRS spring meeting 2001, April 16-20, San Francisco, abstracts

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::f0fac9626df2f3113488fefb9ec66959
https://research.tue.nl/nl/publications/7c07a564-5e74-403b-ab6a-602d18e3d032

Remote silane plasma chemistry effects and their correlation with a-Si:H film properties

Autor: Kessels, W.M.M., Smets, A.H.M., Korevaar, B.A., Adriaenssens, G.J., Van De Sanden, M.C.M., Schram, D.C., Branz, H.M.

Publikováno v: Amorphous and heterogeneous silicon thin films : fundamentals to devices-1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A., 25-30
STARTPAGE=25;ENDPAGE=30;TITLE=Amorphous and heterogeneous silicon thin films : fundamentals to devices-1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A.

A remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the diffe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::99d4019dfce321fd0a0db3665f850306
https://research.tue.nl/nl/publications/3785bf97-ce14-4b0d-bdfd-96493c974005