Zobrazeno 1 - 10
of 270
pro vyhledávání: '"Kopaczek J"'
Autor:
Delorme, O., Cerutti, L., Kudrawiec, R., Luna, Esperanza, Kopaczek, J., Gladysiewicz, M., Trampert, A., Tournié, E., Rodriguez, J. -B.
Publikováno v:
Wang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8
Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the developmen
Externí odkaz:
http://arxiv.org/abs/1910.11210
Autor:
Oliva, R., Laurien, M., Dybala, F., Kopaczek, J., Quin, Y., Tongay, S., Rubel, O., Kudrawiec, R.
Publikováno v:
NPJ 2D Mater. Appl. 3, 20 (2019)
We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance spectroscopy and are analyzed in terms of ab initio calculations with
Externí odkaz:
http://arxiv.org/abs/1812.02995
Autor:
Rogowicz, E.1 (AUTHOR) ernest.rogowicz@pwr.edu.pl, Kopaczek, J.2 (AUTHOR), Polak, M. P.2,3 (AUTHOR), Delorme, O.4 (AUTHOR), Cerutti, L.4 (AUTHOR), Tournié, E.4 (AUTHOR), Rodriguez, J.-B.4 (AUTHOR), Kudrawiec, R.2 (AUTHOR), Syperek, M.1 (AUTHOR)
Publikováno v:
Scientific Reports. 7/28/2022, Vol. 12 Issue 1, p1-10. 10p.
Publikováno v:
In Measurement February 2021 169
Autor:
Sayyad M; Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ 85287, USA., Kopaczek J; Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, Wroclaw, 50-370, Poland., Gilardoni CM; Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge, CB3 0HE, UK., Chen W; Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA., Xiong Y; Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA., Yang S; Aberration Corrected Electron Microscopy Core, Yale University, New Haven, CT 06516, USA., Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Taniguchi T; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan., Kudrawiec R; Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Stanisława Wyspiańskiego 27, Wroclaw, 50-370, Poland., Hautier G; Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA., Atatüre M; Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge, CB3 0HE, UK., Tongay SA; Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ 85287, USA.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Jul; Vol. 36 (30), pp. e2403583. Date of Electronic Publication: 2024 May 22.
Publikováno v:
In Measurement November 2019 146:879-884
Autor:
Han Y; Center for Materials of the Universe, School of Molecular Sciences, Arizona State University, Tempe, AZ 85287., Ou Y; School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, AZ 85287., Sun H; School of Science, Sun Yat-Sen University, Shenzhen 518107, R.P. China., Kopaczek J; School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, AZ 85287.; Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wrocław 50-370, Poland., Leonel GJ; Center for Materials of the Universe, School of Molecular Sciences, Arizona State University, Tempe, AZ 85287., Guo X; Eyring Materials Center, Arizona State University, Tempe, AZ 85287., Brugman BL; Center for Materials of the Universe, School of Molecular Sciences, Arizona State University, Tempe, AZ 85287., Leinenweber K; Center for Materials of the Universe, School of Molecular Sciences, Arizona State University, Tempe, AZ 85287., Xu H; Center for Materials of the Universe, School of Molecular Sciences, Arizona State University, Tempe, AZ 85287., Wang M; Center for Neutron Science and Technology, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, R.P. China., Tongay S; School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, AZ 85287., Navrotsky A; Center for Materials of the Universe, School of Molecular Sciences, Arizona State University, Tempe, AZ 85287.; School for Engineering of Matter Transport and Energy, Arizona State University, Tempe, AZ 85287.
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America [Proc Natl Acad Sci U S A] 2024 Mar 19; Vol. 121 (12), pp. e2321540121. Date of Electronic Publication: 2024 Mar 14.
Autor:
Kudrawiec, R., Kopaczek, J., Delorme, O., Polak, M. P., Gladysiewicz, M., Luna, E., Cerutti, L., Tournié, E., Rodriguez, J. B.
Publikováno v:
Journal of Applied Physics; 5/28/2019, Vol. 125 Issue 20, pN.PAG-N.PAG, 12p, 1 Black and White Photograph, 3 Diagrams, 2 Charts, 9 Graphs
Autor:
Wozniak, T., Faria Junior, P. E., Oliva, R., Tołłoczko, A., Kopaczek, J., Zelewski, S., Dybała, F., Fabian, J., Scharoch, P., Kudrawiec, R.
Publikováno v:
50th International School & Conference on the Physics of Semiconductors "Jaszowiec 2022", 04.-10.06.2022, Szczyrk, Poland
Electronic properties of layered van der Waals crystals can be effectively tuned by means of external and configurational factors. It allows for the investigation of the fundamental material properties that are valuable for technological applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::343cfeb5c2de5215ebd71a023fd65c2b
https://www.hzdr.de/publications/Publ-34740-1
https://www.hzdr.de/publications/Publ-34740-1
Autor:
Pienia Żek A; Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland., Dybała F; Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland., Polak MP; Materials Science and Engineering Department, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States., Przypis Ł; Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.; Saule Research Institute, Wroclaw Technology Park, 11 Dunska Street, Sigma Building, 54-130 Wrocław, Poland., Herman AP; Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland., Kopaczek J; Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland., Kudrawiec R; Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.
Publikováno v:
The journal of physical chemistry letters [J Phys Chem Lett] 2023 Jul 20; Vol. 14 (28), pp. 6470-6476. Date of Electronic Publication: 2023 Jul 12.