Analog reservoir computing via ferroelectric mixed phase boundary transistors.

Autor: Kim J; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Park EC; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Shin W; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.; Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea., Koo RH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Han CH; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Kang HY; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Yang TG; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Goh Y; Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, Republic of Korea., Lee K; Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, Republic of Korea., Ha D; Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, Republic of Korea., Cheema SS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. sscheema@mit.edu., Jeong JK; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea. jkjeong1@hanyang.ac.kr., Kwon D; Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea. dw79kwon@hanyang.ac.kr.

Publikováno v: Nature communications [Nat Commun] 2024 Oct 23; Vol. 15 (1), pp. 9147. Date of Electronic Publication: 2024 Oct 23.

Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing.

Autor: Koo RH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Shin W; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.; Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea., Kim J; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA., Yim J; Department of Electrical Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Ko J; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Jung G; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Im J; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Park SH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Kim JJ; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Cheema SS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA., Kwon D; Department of Electrical Engineering, Hanyang University, Seoul, 04763, Republic of Korea., Lee JH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.; Ministry of Science and ICT, Sejong-si, 30109, South Korea.

Publikováno v: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Sep 26, pp. e2407729. Date of Electronic Publication: 2024 Sep 26.

Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-Based Neuromorphic System.

Autor: Koo RH; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Shin W; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Kim S; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Im J; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Park SH; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Ko JH; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Kwon D; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Kim JJ; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea., Kwon D; Department of Electrical Engineering, Hanyang University, Seoul, 04763, South Korea., Lee JH; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea.; Ministry of Science and ICT, Sejong, 30109, South Korea.

Publikováno v: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Feb; Vol. 11 (5), pp. e2303735. Date of Electronic Publication: 2023 Dec 01.

In-Memory-Computed Low-Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide.

Autor: Shin W; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Kim J; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Jung G; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Ju S; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea., Park SH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Jeong Y; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Hong S; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Koo RH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Yang Y; Research and Development Division, SK Hynix Inc., Icheon, 17736, Republic of Korea., Kim JJ; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea., Han S; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea., Lee JH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.; Ministry of Science and ICT, Sejong, 30121, Republic of Korea.

Publikováno v: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2023 Mar; Vol. 10 (7), pp. e2205725. Date of Electronic Publication: 2023 Jan 16.

Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization.

Autor: Shin W; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Yim J; Department of Electrical Engineering, Inha University, Incheon, Korea. dw79kwon@inha.ac.kr., Bae JH; School of Electrical Engineering, Kookmin University, Seoul 02707, Korea., Lee JK; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Hong S; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Kim J; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Jeong Y; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Kwon D; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Koo RH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Jung G; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Han C; Department of Electrical Engineering, Inha University, Incheon, Korea. dw79kwon@inha.ac.kr., Kim J; Department of Electrical Engineering, Inha University, Incheon, Korea. dw79kwon@inha.ac.kr., Park BG; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr., Kwon D; Department of Electrical Engineering, Inha University, Incheon, Korea. dw79kwon@inha.ac.kr., Lee JH; Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea. jhl@snu.ac.kr.

Publikováno v: Materials horizons [Mater Horiz] 2022 Jun 06; Vol. 9 (6), pp. 1623-1630. Date of Electronic Publication: 2022 Jun 06.