Zobrazeno 1 - 10
of 153
pro vyhledávání: '"Konstantinos Zekentes"'
Publikováno v:
Materials, Vol 17, Iss 5, p 1135 (2024)
Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research f
Externí odkaz:
https://doaj.org/article/3e73ec266678456ca51b656b395d56e9
Selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
Publikováno v:
Key Engineering Materials. 947:83-88
This work aims to optimize Plasma-Enhanced Chemical Vapour Deposition (PECVD) amorphous hydrogenated silicon carbide (a-SiC:H) as a conformal passivation layer for invasive microelectrode array (MEA) neural interface applications. By carefully tuning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca61af89bef5d595e8b241e04aa061e
https://doi.org/10.4028/p-762f40
https://doi.org/10.4028/p-762f40
Publikováno v:
Key Engineering Materials. 946:111-118
In this paper, a suitable process technology is employed to fabricate a new open gate silicon carbide-based junction field-effect transistor (OG-4H-SiC-JFET) intended to be used for all types of biochemical sensing applications. The main focus is ded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75cf51e2d8b3f6275198d14df696c6f8
https://doi.org/10.4028/p-03m3ss
https://doi.org/10.4028/p-03m3ss
Autor:
Olfa Karker, Konstantinos Zekentes, Aude Bouchard, Isabelle Gélard, Xavier Mescot, Valerie Stambouli, Edwige Bano
Publikováno v:
Materials Science Forum. 1062:608-612
A SiCNWFET device serving as a biosensor was designed and simulated using Silvaco ATLAS device simulation software. The performance of the designed device in charges sensing was investigated. The device shows the ability to recognize different interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf01eaf30cabfe3d609c4e7cb1e2224c
https://doi.org/10.4028/p-23d7ab
https://doi.org/10.4028/p-23d7ab
Autor:
Konstantinos Zekentes, Victor Veliadis, Sei-Hyung Ryu, Konstantin Vasilevskiy, Spyridon Pavlidis, Arash Salemi, Yuhao Zhang
Publikováno v:
More-than-Moore Devices and Integration for Semiconductors ISBN: 9783031216091
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94211598bf9d3dc65bf536b0d4664974
https://doi.org/10.1007/978-3-031-21610-7_2
https://doi.org/10.1007/978-3-031-21610-7_2
Publikováno v:
IEEE Transactions on Electron Devices. 68:2582-2586
A comparative study of the simulated breakdown voltage of 4H-SiC devices has been conducted for the most widely used impact ionization models (Selberherr, Hatakeyama), based on the experimental data of 4H-SiC pn diodes. The effect of mesh density on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd41cf9dc691a947b1f5a0447fbc94e
https://doi.org/10.1109/ted.2021.3066143
https://doi.org/10.1109/ted.2021.3066143
Autor:
Katerina Tsagaraki, George Konstantinidis, Konstantinos Zekentes, Nikolaos Makris, Antonis Stavrinidis, Hervé Peyre, Maria Kayambaki
Publikováno v:
Materials Science Forum. 963:328-331
Secondary electron imaging of SiC epi-structures is commonly used as it allows doping topography i.e. the knowledge of the spatial extension of differently doped layers. Determination of the doping level of the layers was not possible until now. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9765510692eb98378b8ac6ede9380892
https://doi.org/10.4028/www.scientific.net/msf.963.328
https://doi.org/10.4028/www.scientific.net/msf.963.328
Autor:
Konstantinos Zekentes, Jihoon Choi, Valérie Stambouli, Edwige Bano, Olfa Karker, Konstantinos Rogdakis
Publikováno v:
Microelectronic Engineering. 255:111704
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e66c6523cb329f75315b97f888fa5f
https://doi.org/10.1016/j.mee.2021.111704
https://doi.org/10.1016/j.mee.2021.111704
Autor:
Maria Kayambaki, Nikolaos Makris, Konstantinos Zekentes, George Konstantinidis, Antonis Stavrinidis
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.649-652. ⟨10.4028/www.scientific.net/MSF.924.649⟩
Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.649-652. ⟨10.4028/www.scientific.net/MSF.924.649⟩
This paper presents and discusses the depletion mechanisms that dominate in a TSI-VJFET under different bias conditions as expressed by the gate-source (CGS) and gate-drain (CGD) capacitances. It is shown that at pinch off the dominant capacitance is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d8ea845bfa4cb24a6c0116a4268bb80
https://doi.org/10.4028/www.scientific.net/msf.924.649
https://doi.org/10.4028/www.scientific.net/msf.924.649