Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Konstantin N. Galkin"'
Autor:
Nikolay G. Galkin, Dmitrii L. Goroshko, Ivan A. Tkachenko, Aleksey Yu. Samardak, Konstantin N. Galkin, Evgenii Yu. Subbotin, Sergei A. Dotsenko, Dmitry B. Migas, Anton K. Gutakovskii
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3707 (2022)
In this study, the appearance of magnetic moments and ferromagnetism in nanostructures of non-magnetic materials based on silicon and transition metals (such as iron) was considered experimentally and theoretically. An analysis of the related literat
Externí odkaz:
https://doaj.org/article/e86f7c3615904b969dc1757de4d9f7a8
Autor:
Nikolay G. Galkin, Dmitrii T. Yan, Konstantin N. Galkin, Aleksandr V. Nepomnyaschiy, Dmitrii L. Goroshko
Publikováno v:
2022 International Conference on Electrical Engineering and Photonics (EExPolytech).
Autor:
Konstantin N. Galkin
Publikováno v:
Anthropology & Aging, Vol 41, Iss 2, Pp 187-198 (2020)
n/a
Publikováno v:
Solid State Phenomena. 312:38-44
Studies are devoted to determining the effect of long-term storage (up to 200 days) of untreated and immersion-treated layers of mesoporous silicon in an aqueous lithium bromide solution obtained by anodizing with a current density of 10 mA/cm2 in el
Autor:
Evgeniy Y. Subbotin, Konstantin N. Galkin, D. L. Goroshko, Evgeniy Anatoljevich Chusovotin, Nikolay G. Galkin
Publikováno v:
Solid State Phenomena. 312:45-53
The studies are devoted to the development of the technology of multilayer incorporation of nanocrystals (NCs) of semiconductor chromium and iron disilicides with a layer density no less than 2x1010 cm-2, the establishment of the growth mechanism of
Autor:
L. Dermenji, Ernest Arushanov, D. L. Goroshko, E.A. Chusovitin, Nikolay G. Galkin, K. G. Lisunov, Konstantin N. Galkin
Publikováno v:
Solid State Phenomena. 312:3-8
Resistivity, r (T), and Hall coefficient in weak (B < 1 T) magnetic fields, R (T), are investigated in Ca2Si and CaSi2 films at temperatures T between ~ 20 - 300 K. In CaSi2, r (T) is typical of metals increasing with T within the whole temperature r
Autor:
Nikolay G. Galkin, Konstantin N. Galkin, Dmitrii L. Goroshko, Sergei A. Dotsenko, Oleg V. Kropachev, Igor M. Chernev, Evgenii Yu Subbotin, Aleksey Yu Alekseev, Dmitry B. Migas, Zsolt Fogarassy, Bela Pecz, Anton K. Gutakovskii
Publikováno v:
Japanese Journal of Applied Physics. 62:SD0803
Single-phase films of semiconductor and semimetallic calcium silicides (Ca2Si, CaSi, and CaSi2), as well as films with a significant contribution of Ca5Si3 and Ca14Si19 silicides, were grown on single-crystal silicon and sapphire substrates. The anal
Publikováno v:
Vacuum. 203:111302
Autor:
Nikolay G. Galkin, Anton K. Gutakovskii, D. L. Goroshko, S.A. Dotsenko, Konstantin N. Galkin, E.A. Chusovitin
Publikováno v:
Key Engineering Materials. 806:30-35
The morphology and structure of iron silicide nanorods formed on Si (111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the subs
Autor:
Andrey B. Filonov, E. A. Chusovitin, Vlodislav O. Bogorodz, D. L. Goroshko, Béla Pécz, Konstantin N. Galkin, Ildikó Cora, A. M. Maslov, Andrei V. Tupkalo, Sergey A. Dotsenko, Victor E. Borisenko, Nikolay G. Galkin, Evgenii Y. Subbotin, Dmitrii B. Migas
Publikováno v:
Journal of Alloys and Compounds. 770:710-720
The methods of heteroepitaxial growth of Si/CaSi2/Si(111) double heterostructures (DHS) at 500 °C have been developed. Thin CaSi2 layers with the thicknesses of 14–40 nm have been successfully embedded in the silicon matrix. The hR6-CaSi2(001)||Si