Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Konstantin D Stefanov"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:3136-3139
Autor:
Konstantin D. Stefanov, Martin J. Prest, Mark Downing, Elizabeth George, Naidu Bezawada, Andrew D. Holland
Publikováno v:
Sensors, Vol 20, Iss 7, p 2031 (2020)
A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and th
Externí odkaz:
https://doaj.org/article/65148168b4a84a70bd47e87ed0cac07a
Autor:
Konstantin D Stefanov
Publikováno v:
CMOS Image Sensors ISBN: 9780750332354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b934310fd32386aa17fe9f8848cef297
https://doi.org/10.1088/978-0-7503-3235-4ch4
https://doi.org/10.1088/978-0-7503-3235-4ch4
Autor:
Konstantin D Stefanov
Publikováno v:
CMOS Image Sensors ISBN: 9780750332354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d19d313bf733a7ce827514a4c53418a
https://doi.org/10.1088/978-0-7503-3235-4ch1
https://doi.org/10.1088/978-0-7503-3235-4ch1
Autor:
Konstantin D Stefanov
Publikováno v:
CMOS Image Sensors ISBN: 9780750332354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60f046e4cd08e007941a49ddac2cc4cc
https://doi.org/10.1088/978-0-7503-3235-4ch2
https://doi.org/10.1088/978-0-7503-3235-4ch2
Autor:
Konstantin D Stefanov
Publikováno v:
CMOS Image Sensors ISBN: 9780750332354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a219614eb26636d29d4230da4b36a942
https://doi.org/10.1088/978-0-7503-3235-4ch5
https://doi.org/10.1088/978-0-7503-3235-4ch5
Autor:
Konstantin D Stefanov
Publikováno v:
CMOS Image Sensors ISBN: 9780750332354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a079a1af55421e3c9218071611946ca5
https://doi.org/10.1088/978-0-7503-3235-4ch6
https://doi.org/10.1088/978-0-7503-3235-4ch6
Autor:
Konstantin D. Stefanov, Charles Townsend-Rose, Thomas Buggey, James Ivory, Oliver Hetherington, Andrew D. Holland, Julian Heymes, Jérôme Pratlong, Georgios Tsiolis, David Morris, Kyriaki Minoglou, Thibaut Prod'homme, Matthew Soman
Publikováno v:
X-Ray, Optical, and Infrared Detectors for Astronomy X.
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1107-1113
The radiation hardness of a fully depleted pinned photodiode (PPD) CMOS image sensor (CIS) has been evaluated with gamma and proton irradiations. The sensors employ an additional n-type implant in pixel which allows full depletion to be achieved by r
We present a readout scheme for CMOS image sensors that can be used to achieve arbitrarily high dynamic range (HDR) in principle. The linear full well capacity (LFWC) in high signal regions was extended 50 times from 20 ke$^{-}$ to 984 ke$^{-}$ via a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c91ddf29d57784413ea21b34a2d078a