Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Konstantin Bourdelle"'
Autor:
Qing-Tai Zhao, Simon Richter, Christian Schulte-Braucks, Lars Knoll, Sebastian Blaeser, Gia Vinh Luong, Stefan Trellenkamp, Anna Schafer, Andreas Tiedemann, Jean-Michel Hartmann, Konstantin Bourdelle, Siegfried Mantl
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 103-114 (2015)
Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified. Along this line, improvements achieved by the implementation of uniaxial str
Externí odkaz:
https://doaj.org/article/ce50efb927fd4f579106abc420c524cf
Autor:
Konstantin Bourdelle, Pierre C. Fazan, Marc Aoulaiche, C. Caillat, Bich-Yen Nguyen, Cor Claeys, Liesbeth Witters, Eddy Simoen, Joao Antonio Martino, Malgorzata Jurczak
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
The floating body retention time is investigated on fully depleted SOI devices with UTBOX. The retention is occurring through the junctions and strongly assisted by defects in the junction space charge region during the holding state at a negative ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5994366a09c779cbcde475e00c80623
https://doi.org/10.1016/j.sse.2015.11.021
https://doi.org/10.1016/j.sse.2015.11.021
Autor:
L. B. Spejo, M. V. Puydinger dos Santos, J. L. Arrieta-Concha, R. A. Minamisawa, José Alexandre Diniz, Konstantin Bourdelle, Artur Pratti de Barros
Publikováno v:
Journal of Applied Physics. 128:045704
Strain engineering is a key technology to continue Moore's law with silicon or any other foreseen semiconductor in very large scale integration. The characterization of strain in nanostructures is important to determine the potential of these technol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5f0bad081fd45d71af5e4387bc5bf8a
https://doi.org/10.1063/5.0013284
https://doi.org/10.1063/5.0013284
Autor:
Sebastian Blaeser, Stefan Trellenkamp, Dan Buca, G. V. Luong, S. Mantl, Hans Sigg, A. Schafer, Lars Knoll, Qing-Tai Zhao, Martin J. Süess, Konstantin Bourdelle
Publikováno v:
Solid-State Electronics. 108:19-23
In this work we demonstrate the benefit of high uniaxial tensile strain on the performances of Si nanowire (NW) MOSFETs. High uniaxial tensile strained Si NWs were realized by exploiting a “bridge technology” based on patterning of an initial bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb54b92fb103d73ea17e40d12ab03802
https://doi.org/10.1016/j.sse.2014.12.015
https://doi.org/10.1016/j.sse.2014.12.015
Autor:
S. Richter, A. Schafer, S. Mantl, J.M. Hartmann, Qing-Tai Zhao, Stefan Trellenkamp, Konstantin Bourdelle
Publikováno v:
Solid-State Electronics. 108:97-103
Complementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca1efa478313538a3b5ec49b5b2d6588
https://doi.org/10.1016/j.sse.2015.02.018
https://doi.org/10.1016/j.sse.2015.02.018
Autor:
Stefan Trellenkamp, Lars Knoll, Stephan Wirths, Konstantin Bourdelle, Sebastian Blaeser, S. Mantl, A. Nichau, S. Richter, Dan Buca, A. Schafer, Qing-Tai Zhao
Publikováno v:
Solid-State Electronics. 98:32-37
Electrical characteristics of silicon nanowire tunnel field effect transistors (TFETs) are presented and benchmarked versus other concepts. Particular emphasis is placed on the band to band tunneling (BTBT) junctions, the functional core of the devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3d768f2dd632052b47038a7c279c2e
https://doi.org/10.1016/j.sse.2014.04.006
https://doi.org/10.1016/j.sse.2014.04.006
Autor:
S. Richter, A. Nichau, Lars Knoll, Konstantin Bourdelle, Stefan Trellenkamp, J.M. Hartmann, Qing-Tai Zhao, A. Schafer, S. Mantl
Publikováno v:
Solid-State Electronics. 97:76-81
In this work we experimentally demonstrate a novel method to fabricate short channel complementary planar strained Si (sSOI) TFETs with improved tunneling junctions by implantation into silicide method (IIS). For the first time we have successfully f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02255eb4c640444a8feba94db9427ec5
https://doi.org/10.1016/j.sse.2014.04.025
https://doi.org/10.1016/j.sse.2014.04.025
Publikováno v:
IEEE Transactions on Electron Devices. 60:3611-3617
This paper presents a comprehensive simulation study of the process and statistical variability in 16-nm technology node bulk and silicon-on-insulator (SOI) fin field effect transistors (FinFETs). The devices are carefully designed to offer good manu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::028c25409920e1bda7c1b4b14ce53a50
https://doi.org/10.1109/ted.2013.2281474
https://doi.org/10.1109/ted.2013.2281474
Autor:
Lars Knoll, S. Mantl, A. Schafer, Qing-Tai Zhao, Stefan Trellenkamp, Konstantin Bourdelle, M. Schmidt
Publikováno v:
Solid-State Electronics. 84:211-215
Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped nickel disilicide (NiSi 2 ) source and drain (S/D) contacts. We developed a novel, self-aligned proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ef176649665527eb2eaa2b8f90e47a
https://doi.org/10.1016/j.sse.2013.02.028
https://doi.org/10.1016/j.sse.2013.02.028
Autor:
S. Mantl, Stefan Trellenkamp, Sebastiano Strangio, G. V. Luong, A. Tiedemannn, S. Lenk, Qing-Tai Zhao, Konstantin Bourdelle
In this work, strained Si (sSi) nanowire array of n-TFETs with gates all around (GAA) yielding ON-currents of 5 μA/μm at a supply voltage Vdd = 0.5 V are presented. Tilted ion implantation with BF2+ into NiSi2 dopant has been used to form a highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4227bfbc0e3c01db2719ae9aa6a50b8
http://hdl.handle.net/11568/999902
http://hdl.handle.net/11568/999902
