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Autor:
Petr Konstantinovich Skorobogatov, Konstantin Alekseevvich Epifantsev, Nikolai Sergeyevich Djatlov, Oleg Anatolievich Gerasimchuk
Publikováno v:
Безопасность информационных технологий, Vol 23, Iss 3, Pp 69-72 (2016)
The results of the single pulsing electrical overstress (EOS) series with energy below the threshold of failure for modern submicron IC’s design are presented. The study was conducted on two types of modern sub-micron VLSI. The obtained results con
Externí odkaz:
https://doaj.org/article/0cb90b1982764f7e94d4d1a45448b187