Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Konrad Kostecki"'
Autor:
Bernhard Schwartz, Michael Oehme, Joerg Schulze, Konrad Kostecki, Tzanimir Arguirov, P. Saring, Martin Kittler, Erich Kasper
Publikováno v:
Solid State Phenomena. 242:361-367
We analyzed multi quantum well light emitting diodes, consisting of ten alternating GeSn/Ge-layers, were grown by molecular beam epitaxy on Si. The Ge barriers were 10 nm thick and the GeSn wells were grown with 7% Sn and thicknesses between 6 and 12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3441ecf02855ba9c16079fe8a99811b3
https://doi.org/10.4028/www.scientific.net/ssp.242.361
https://doi.org/10.4028/www.scientific.net/ssp.242.361
Autor:
Daniel Widmann, Jörg Schulze, Martin Kittler, Tzanimir Arguirov, R. Koerner, Stefan Bechler, Konrad Kostecki, Michael Oehme, Martin Gollhofer
Publikováno v:
Solid State Phenomena. 242:353-360
The heteroepitaxial growth of GeSn and Ge crystals on Si substrates are investigated for Si-based photonic applications. Light Emitting Diodes with emission wavelengths from 2,100 to 1,550 nm could be demonstrated with active intrinsic GeSn light emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8466858c4860978470dd5d5cdfa35b92
https://doi.org/10.4028/www.scientific.net/ssp.242.353
https://doi.org/10.4028/www.scientific.net/ssp.242.353
Autor:
Daniel Widmann, Jörg Schulze, M. Schmid, Erich Kasper, Roman Körner, Michael Oehme, Wogong Zhang, Martin Gollhofer, Kaiheng Ye, Konrad Kostecki
Publikováno v:
Solid-State Electronics. 110:71-75
In this paper the optical absorption of the GeSn PIN photodetector was investigated. The vertical GeSn PIN photodetectors were fabricated by molecular beam epitaxy (MBE) and dry etching. By means of current density–voltage (J–V) and capacity–vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c83ba5206d17196e37cee2e8cd864002
https://doi.org/10.1016/j.sse.2015.01.017
https://doi.org/10.1016/j.sse.2015.01.017
Autor:
Inga A. Fischer, Jörg Schulze, Karin Potje-Kamloth, F. Berkmann, Konrad Kostecki, Stefan Bechler, Daniel Latta, Yasmine Elogail, Lion Augel
Publikováno v:
Microfluidics and Nanofluidics. 21
Vertical optofluidic biosensors based on refractive index sensing promise highest sensitivities at smallest area foot-print. Nevertheless, when it comes to large scale fabrication and application of such sensors, cheap and robust platforms for sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2598c69eb3e3de175cd7a93c793f7bb
https://doi.org/10.1007/s10404-017-2007-3
https://doi.org/10.1007/s10404-017-2007-3
Publikováno v:
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S).
Ge integrated on Si is a promising candidate for energy-efficient field effect transistor (FET) applications due to its high mobility and compatibility to CMOS technology. Nevertheless, using Ge in FET fabrication is challenging due to difficulties i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17db3ccd570c33274a69e24260344b37
https://doi.org/10.1109/e3s.2017.8246166
https://doi.org/10.1109/e3s.2017.8246166
Publikováno v:
Thin Solid Films. 557:169-172
Strained and unstrained GeSn layers on Si substrates were grown with Sn contents up to 20% and 25%, respectively. All metastable layer structures were fabricated by means of an ultra-low temperature molecular beam epitaxy process. The useful thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cac1e40d40eeaa399e5d6c9589b4199a
https://doi.org/10.1016/j.tsf.2013.10.064
https://doi.org/10.1016/j.tsf.2013.10.064
Autor:
Bernhard Holländer, Stephan Wirths, Konrad Kostecki, Jörg Schulze, Dan Buca, Michael Oehme, Erich Kasper
Publikováno v:
Journal of Crystal Growth. 384:71-76
This paper reports on the growth and characterization of highly compressive strained GeSn layers on thin strain relaxed Ge virtual substrates on Si wafers. Sn concentration up to 12.5%, which is about more than 10 times the thermal equilibrium predic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6037bc8382eb88bde8fce9593856b3fa
https://doi.org/10.1016/j.jcrysgro.2013.09.018
https://doi.org/10.1016/j.jcrysgro.2013.09.018
Publikováno v:
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM).
Serving as the electrical to optical converter, the on-chip light source is the key component for monolithically integrated Group IV photonics. Here, we compare a variety of concepts for light generation on a Si chip, realized by Ge and GeSn heterost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0a8d4dc8877d197e26cbb9c0cd52208
https://doi.org/10.1109/phosst.2016.7548536
https://doi.org/10.1109/phosst.2016.7548536
The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source
Autor:
R. Koerner, Inga A. Fischer, Michael Oehme, M. Yorgidis, Stefan Bechler, Jörg Schulze, O. Latzl, Erlend Rolseth, Konrad Kostecki, Andreas Blech
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
While monolithically integrated light sources for Si photonics have been investigated using Ge and GeSn on Si substrates [1-3], the challenges in material quality and efficiency remain to be solved. Turning the Group-IV material into a direct semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c784b99484442e55cf5e9ed1c5f25af
https://doi.org/10.1109/drc.2016.7548478
https://doi.org/10.1109/drc.2016.7548478
Autor:
Lion Augel, Maria Soler, Stefan Bechler, Jörg Schulze, Florian Hornung, Cenk Ibrahim Özdemir, L. A. Dunbar, Hatice Altug, Inga A. Fischer, Audrey Berrier, Dordaneh Etezadi, Konrad Kostecki
Publikováno v:
SPIE Proceedings.
Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a498f20bcc7194c2c8100e0a47f0bfa
https://doi.org/10.1117/12.2212650
https://doi.org/10.1117/12.2212650