Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Konrad Knapp"'
Autor:
Günther Hess, Konrad Knapp, Florian Letzkus, Mathias Irmscher, Markus Renno, Eugen Röhrle, Holger Seitz
Publikováno v:
SPIE Proceedings.
Extreme Ultraviolet Lithography (EUVL) is the favourite next generation lithography candidate for IC device manufacturing with feature sizes beyond 32nm. Different absorber layers and manufacturing concepts have been published for the fabrication of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43adc9e4d4e2847e566de7885ee695ee
https://doi.org/10.1117/12.729032
https://doi.org/10.1117/12.729032
Publikováno v:
SPIE Proceedings.
Crystalline calcium fluoride is one of the key materials for 193nm lithography and is used for laser optics, beam delivery system optics and stepper/scanner illumination optics. In comparison to fused silica it shows a much higher laser durability. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a62f3ec7b3550c13e498825bee566bc
https://doi.org/10.1117/12.712108
https://doi.org/10.1117/12.712108
Autor:
Ulrich Hermanns, Hans Becker, Markus Renno, Konrad Knapp, Günter Hess, Ute Buttgereit, Holger Seitz
Publikováno v:
SPIE Proceedings.
Reflections occur at every interface of a mask and are known as flare. Flare effects have a negative impact on the resist exposure at the wafer level. In this paper total antireflection (AR) solutions are presented to eliminate flare effects at mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9c134442202d78913f02582255f296e
https://doi.org/10.1117/12.632113
https://doi.org/10.1117/12.632113
Autor:
Ulrich Hermanns, Günter Hess, Markus Renno, Konrad Knapp, Hans Becker, Ute Buttgereit, Holger Seitz
Publikováno v:
SPIE Proceedings.
Schott's already commercially available two layer Ta/SiO2 phase shift system can be tuned from 6% up to 40% transmission for 157, 193 and 248 nm lithography wavelengths. Thus one film patterning process provides a wide product range. Attenuated phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280a46fad5d543ac5a165f8464e4c89f
https://doi.org/10.1117/12.625210
https://doi.org/10.1117/12.625210
Autor:
Christian Wies, Ronny Walter, Nathalie Olschewski, Markus Renno, Günter Hess, Konrad Knapp, Holger Seitz, Thorsten Reichardt, Hans Becker, Thomas Leutbecher, Ute Buttgereit, Rainer Lebert, Frank Sobel
Publikováno v:
SPIE Proceedings.
Mask Blanks for EUV Lithography require a lot of new properties and features compared to standard Chrome-on-Glass blanks. Starting from completely new low thermal expansion substrate materials with significantly improved surface quality over multilay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45fccab4742ddc72dcef8e7a57ae63f8
https://doi.org/10.1117/12.637335
https://doi.org/10.1117/12.637335
Autor:
Markus Renno, Nathalie Olschewski, Thorsten Reichardt, Holger Seitz, Hans Becker, Rainer Lebert, Thomas Leutbecher, Ute Buttgereit, Konrad Knapp, Guenter Hess, Christian Wies, Frank Sobel, Ronny Walter
Publikováno v:
SPIE Proceedings.
Mask Blanks for EUV Lithography require a lot of new properties and features compared to standard Chrome-on-Glass mask blanks. SCHOTT Lithotec has introduced all relevant technology steps to manufacture EUV mask blanks. Starting from completely new l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17d465db2bf8c471bc38c83f525880fd
https://doi.org/10.1117/12.600538
https://doi.org/10.1117/12.600538
Autor:
Ute Natura, Christian Muehlig, Karin Dr. Pöhl, Lutz Dr. Parthier, Martin Letz, Konrad Knapp, Guenter Grabosch
Publikováno v:
SPIE Proceedings.
Photolithography is a key technolgoy for the production of semiconductor devices. It supports the continuing trend towards higher integration density of microelectronic devices. The material used in the optics of lithography tools has to be of extrem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::817780f8db53613c38e21bcbaa6d632c
https://doi.org/10.1117/12.585247
https://doi.org/10.1117/12.585247
Autor:
Joerg Butschke, Corinna Koepernik, Markus Renno, Torsten Reichardt, Lutz Aschke, Holger Seitz, Florian Letzkus, Nathalie Olschewski, Konrad Knapp, Ute Buttgereit, Frank Sobel, Guenter Hess, Hans Willy Becker
Publikováno v:
SPIE Proceedings.
EUV Lithography requires high end quality defect free layers from the backside coating to the absorber stack. Low thermal expansion materials (LTEM) substrates with super flat surfaces are already available with low defect backside coating for E-Chuc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0835ee1a45fe8d961ef7f9cdbc8e4b5b
https://doi.org/10.1117/12.568787
https://doi.org/10.1117/12.568787
Autor:
Frank Schmidt, Hans Willy Becker, Holger Seitz, Konrad Knapp, Pascal Schley, Guenter Hess, Frank Sobel, Ute Buttgereit, Nathalie Olschewski, Markus Renno
Publikováno v:
SPIE Proceedings.
Schott's already commercially available two layer Ta/SiO2 phase shift system can be tuned from 6% up to 30% transmission for 157, 193 and 248 nm lithography wavelengths. Thus one film patterning process provides a wide product range. Dry etch process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f70b9e5e1a704414b9733d7f63b6f7f
https://doi.org/10.1117/12.570217
https://doi.org/10.1117/12.570217
Autor:
Lutz Aschke, Hans W. Becker, Falk Friemel, Thomas Leutbecher, Nathalie Olschewski, Markus Renno, Frauke Rueggeberg, Mario Schiffler, Frank Schmidt, Frank Sobel, Kurt Walter, Guenter Hess, Frank Lenzen, Konrad Knapp, Jochen Alkemper, Hrabanus Hack, Klaus Megges, Ina Mitra, Rolf Mueller, Uwe Nolte, Joerg Schumacher, Wolfgang Pannhorst
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d559e58b517a8501647a2793a73bd8
https://doi.org/10.1117/12.568007
https://doi.org/10.1117/12.568007