Zobrazeno 1 - 10
of 194
pro vyhledávání: '"Konopko, L."'
We report the experimental observation of quantized conductance by Rashba bands at the surface of 50-nm Bi nanowires. With increasing magnetic fields along the wire axis, the wires exhibit a stepwise increase of conductance with as many as four disti
Externí odkaz:
http://arxiv.org/abs/1601.08183
Many thermoelectrics like Bi exhibit Rashba spin-orbit surface bands for which topological insulator behavior consisting of ultrahigh mobilities and enhanced thermopower has been predicted. Bi nanowires realize surface-only electronic transport since
Externí odkaz:
http://arxiv.org/abs/1103.1054
Whereas bulk bismuth supports very-high mobility, light, Dirac electrons and holes in its interior, its boundaries support a layer of heavy electrons in surface states formed by spin orbit interaction in the presence of the surface electric field. Sm
Externí odkaz:
http://arxiv.org/abs/0810.3872
We present a study of electronic transport in individual Bi nanowires of large diameter relative to the Fermi wavelength. Measurements of the resistance and thermopower of intrinsic and Sn-doped Bi wires with various wire diameters, ranging from 150-
Externí odkaz:
http://arxiv.org/abs/0711.0010
We report the observation of a dependence of the low temperature resistance of individual single-crystal bismuth nanowires on the Aharonov-Bohm phase of the magnetic flux threading the wire. 55 and 75-nm wires were investigated in magnetic fields of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702368
We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current models of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0311102
Autor:
Konopko, L. A.1 (AUTHOR) l.konopko@nano.asm.md, Nikolaeva, A. A.1 (AUTHOR), Huber, T. E.2 (AUTHOR), Kobylianskaya, A. K.1 (AUTHOR)
Publikováno v:
Semiconductors. May2019, Vol. 53 Issue 5, p662-666. 5p.
Autor:
Nikolaeva, A.1,2 (AUTHOR) A.Nikolaeva@nano.asm.md, Konopko, L.1,2 (AUTHOR), Gherghishan, I.1 (AUTHOR), Rogacki, K.2 (AUTHOR), Stachowiak, P.2 (AUTHOR), Jezowski, A.2 (AUTHOR), Shepelevich, V.3 (AUTHOR), Prokoshin, V.3 (AUTHOR), Gusakova, S.3 (AUTHOR)
Publikováno v:
Semiconductors. May2019, Vol. 53 Issue 5, p657-661. 5p.
Publikováno v:
Surface Engineering & Applied Electrochemistry; Dec2022, Vol. 58 Issue 6, p674-681, 8p
Autor:
Vladescu, Marian, Tamas, Razvan D., Cristea, Ionica, Nikolaeva, A., Konopko, L., Huber, T., Popov, I., Para, G.
Publikováno v:
Proceedings of SPIE; March 2023, Vol. 12493 Issue: 1 p124931F-124931F-4, 1124384p