Zobrazeno 1 - 10
of 268
pro vyhledávání: '"Konakova, R. V."'
An analysis is made of the conditions for ohmic contacts realization in the case of Schottky contacts. Based on the classical notions about the mechanisms of current flow, we consider the generalized model of Schottky contact that takes into account
Externí odkaz:
http://arxiv.org/abs/1504.04212
Autor:
Belyaev, A. E., Klyui, N. I., Konakova, R. V., Luk'yanov, A. M., Sveshnikov, Yu. M., Klyui, A. M.
Publikováno v:
Ukrainian Journal of Physics, 2009, Vol. 54, no. 1-2, pp. 207-215 (www.ujp.bitp.kiev.ua)
The influence of a microwave treatment (MWT) on the optical properties of hexagonal GaN films has been studied. To estimate the internal mechanical strains and the degree of structural perfection in a thin near-surface layer of the film, the electror
Externí odkaz:
http://arxiv.org/abs/1401.5972
Autor:
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vitusevich, S. A., Konakova, R. V., Novitskii, S. V., Sheremet, V. N.
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results can be ex
Externí odkaz:
http://arxiv.org/abs/1401.1658
Autor:
Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya. Ya., Sachenko, A. V., Sheremet, V. N.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010.- V.13, N4.- P.436-438
We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is
Externí odkaz:
http://arxiv.org/abs/1104.1030
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2020, Vol. 23 Issue 3, p253-259. 7p.
Autor:
Okhrimenko, O. B., Bacherikov, Yu. Yu., Lytvyn, P. M., Lytvyn, O. S., Goroneskul, V. Yu., Konakova, R. V.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2023, Vol. 26 Issue 3, p260-269, 10p
Autor:
Budzulyak S. I., Korbutyak D. V., Lots'ko A. P., Vakhnyak N. D., Kalitchuk S. M., Demchina L. A., Konakova R. V., Shinkarenko V. V., Mel'nichuk A. V.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 45-49 (2014)
High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they are doped with chlorine. The detector quality depends on uniformity of chlorine impurity dis
Externí odkaz:
https://doaj.org/article/124ad360c9f5467598b9de6cac36ae5d
Autor:
Romanets, P. M.1, Konakova, R. V.1, Boltovets, M. S.2, Basanets, V. V.2, Kudryk, Ya. Ya.1, Slipokurov, V. S.1 victor.slipokurov@gmail.com
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2019, Vol. 22 Issue 1, p34-38. 5p.
Autor:
Bacherikov, Yu. Yu.1, Konakova, R. V.1, Okhrimenko, O. B.1 olga@isp.kiev.ua, Berezovska, N. I.2, Lytvyn, O. S.3, Kapitanchuk, L. M.4, Svetlichnyi, A. M.5
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2018, Vol. 21 Issue 4, p360-364. 5p.
Autor:
Boltovets N. S., Ivanov V. N., Kovtonyuk V. M., Rayevskaya N. S., Belyaev A. E., Bobyl A. V., Konakova R. V., Kudryk Ya. Ya., Milenin V. V., Novitskiy S. V., Sheremet V. N.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 3-6 (2010)
The article presents the research on interactions between phases in the Ge–Au, Ge–TiBx and Au–TiBxAu contacts to n–n+–n++-InP, both before and after rapid thermal annealing, and also the output parameters of Gunn diodes based on the InP str
Externí odkaz:
https://doaj.org/article/461ad1bcb0b3472ba4bc4a5bcd947c1d