Zobrazeno 1 - 10
of 990
pro vyhledávání: '"Konagai, M."'
Autor:
Tamang, A., Hongsingthong, A., Sichanugrist, P., Jovanov, V., Gebrewold, H.T., Konagai, M., Knipp, D.
Publikováno v:
In Solar Energy Materials and Solar Cells January 2016 144:300-308
8th World Conference on Photovoltaic Energy Conversion; 119-122
Ge solar cells were prepared using three types of p-Ge wafers with carrier concentrations ranging from 1.0 × 1016 / cm3 (0.28 Ωcm) to 3.0 × 1018 / cm3 (0.0063 Ωcm). The surface
Ge solar cells were prepared using three types of p-Ge wafers with carrier concentrations ranging from 1.0 × 1016 / cm3 (0.28 Ωcm) to 3.0 × 1018 / cm3 (0.0063 Ωcm). The surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8afa1f5dae5edfd8ce4c2c543a868ae
Publikováno v:
In Solar Energy Materials and Solar Cells 2010 94(10):1753-1758
37th European Photovoltaic Solar Energy Conference and Exhibition; 295-301
Bifacial a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction and a-SiOx:H/a-SiOx:H/aSi:H/a-Si:H/a-SiOx:H/a-SiOx:H sextuple-junction solar cells were prepared by
Bifacial a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction and a-SiOx:H/a-SiOx:H/aSi:H/a-Si:H/a-SiOx:H/a-SiOx:H sextuple-junction solar cells were prepared by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c06ba63e5d10d5eb0689e124f1c10f4
Publikováno v:
In Solar Energy Materials and Solar Cells 2007 91(20):1887-1891
Autor:
Konagai, M., Sasaki, R.
36th European Photovoltaic Solar Energy Conference and Exhibition; 140-146
Hydrogenated amorphous Si(a-Si:H) Quintuple-junction solar cells which consist of a-SiOx:H/aSiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H were fabricated by plasma CVD method. The tota
Hydrogenated amorphous Si(a-Si:H) Quintuple-junction solar cells which consist of a-SiOx:H/aSiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H were fabricated by plasma CVD method. The tota
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6059ff6969825e6829165ada1b9cf9
36th European Photovoltaic Solar Energy Conference and Exhibition; 522-526
The passivation properties of the hydrogenated amorphous silicon oxide (a-SiOx:H) film with the thin thickness applied to the Si-based heterojunction solar cells were inv
The passivation properties of the hydrogenated amorphous silicon oxide (a-SiOx:H) film with the thin thickness applied to the Si-based heterojunction solar cells were inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f701663828ce049eac457a08051b8ac
35th European Photovoltaic Solar Energy Conference and Exhibition; 262-265
Heterojunction solar cells with a Rib structure are prepared aiming at ultra-thin Si solar cells. In the Rib structure, the Rib region of about 10% in area ratio mechanic
Heterojunction solar cells with a Rib structure are prepared aiming at ultra-thin Si solar cells. In the Rib structure, the Rib region of about 10% in area ratio mechanic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a36918f3954cd2de56fad2b8c8eed6ab
Publikováno v:
In Ultramicroscopy 2002 91(1):97-101
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