Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kon-Tsu Kin"'
Publikováno v:
Microelectronic Engineering. 84:1898-1901
In this study, we improved the interfacial properties of high-@k gate stacks with the surface treatment of ozonated water prior to deposition of hafnium oxide (HfO"2). We demonstrated that the Ozone-oxide improved the electrical properties of the HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::968fa105864315b1158c1a8077a82efa
https://doi.org/10.1016/j.mee.2007.04.127
https://doi.org/10.1016/j.mee.2007.04.127
Autor:
Kon-Tsu Kin, Ting-Chang Chang, Pei-Lin Chang, Yi-Ching Chen, Po-Tsun Liu, Chiou-Mei Chen, Chih-Tsung Tsai
Publikováno v:
IEEE Transactions On Nanotechnology. 6:29-34
This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::333050e46a67bf193490ba04444834ab
https://doi.org/10.1109/tnano.2006.886785
https://doi.org/10.1109/tnano.2006.886785
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 19:208-215
A method for the treatment of chemical–mechanical planaarization wastewater that utilizes the principles of electrocoagulation (EC) and electro-Fenton (EF) reactions has been investigated. The method consists of subjecting the wastewater to an appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::986536321928daffd875f90f42a83f50
https://doi.org/10.1109/tsm.2006.873511
https://doi.org/10.1109/tsm.2006.873511
Autor:
Kon-Tsu Kin, Farhang Shadman
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 13:1-9
A mechanistic model is developed for the distribution, oxidation, and removal of organic impurities in typical polishing loops of ultrapure water (UPW) plants. The model is applied to the case of the oxidation of organics by ultraviolet (UV), ozone,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4127b3fe9f4c13b7075fe9f9e2a71c5e
https://doi.org/10.1109/66.827334
https://doi.org/10.1109/66.827334
Publikováno v:
Clean Technologies and Environmental Policy. 1:31-38
The oxidation of trace organic impurities in ultrapure water by ultraviolet light (UV), ozone, and the combination of UV/ozone is investigated. The emphasis is on the development of a global model to simulate the process that take place in the typica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ae2f8b2bd9dccc023824d69f051f83
https://doi.org/10.1007/s100980050005
https://doi.org/10.1007/s100980050005
Publikováno v:
2006 IEEE Conference on Emerging Technologies - Nanoelectronics.
In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al 2 O 3 and HfO 2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4119a6d706fe5a84629501848f27d0b
https://doi.org/10.1109/nanoel.2006.1609772
https://doi.org/10.1109/nanoel.2006.1609772
Publikováno v:
2006 IEEE Conference on Emerging Technologies - Nanoelectronics.
This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c792ad6efeea050c3e4f645b80eabf
https://doi.org/10.1109/nanoel.2006.1609754
https://doi.org/10.1109/nanoel.2006.1609754
Publikováno v:
2006 IEEE Conference on Emerging Technologies - Nanoelectronics.
The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6607ba056944cac3a80e621d17b53bf
https://doi.org/10.1109/nanoel.2006.1609734
https://doi.org/10.1109/nanoel.2006.1609734
Autor:
Chi Feng Weng, Po-Tsun Liu, Ting-Chang Chang, Chih Tsung Tsai, Po-Yu Yang, Kon Tsu Kin, Fon Shan Huang
Publikováno v:
Journal of Applied Physics. 103:074108
To improve the dielectric properties of sputter-deposited hafnium oxide (HfO2) films, the supercritical CO2 (SCCO2) fluid technology is introduced as a low temperature treatment. The ultrathin HfO2 films were deposited on p-type (100) silicon wafer b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced9b6159ccfb963a0b201d80f6bacd5
https://doi.org/10.1063/1.2844496
https://doi.org/10.1063/1.2844496
Autor:
Yu Chieh Kuo, Ting-Chang Chang, Pei Lin Chang, Po Yu Yang, Po-Tsun Liu, Fon Shan Huang, Kon Tsu Kin, Chih Tsung Tsai
Publikováno v:
Applied Physics Letters. 91:012109
A low-temperature method, supercritical CO2 fluid (SCF) technology, is proposed to improve the dielectric properties of ultrathin hafnium oxide (HfO2) film at 150°C without significant formation of parasitic oxide at the interface between HfO2 and S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e17f4d8005c9bd5ec064efbf057b9883
https://doi.org/10.1063/1.2753762
https://doi.org/10.1063/1.2753762