Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Komaschenko V. N."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 35-38 (2012)
The article presents the study on spectral, capacitance-voltage and current-voltage characteristics of surface-barrier structures based on A2B6 composition with different carrier concentration profiles in space-charge region sensitive to ultraviolet
Externí odkaz:
https://doaj.org/article/3f54d5a6967e466aa7c756016f12bcd6
Autor:
Komaschenko, V. N.1 komas@isp.kiev.ua, Kolezhuk, K. V.1, Yaroshenko, N. V.1, Sheremetova, G. I.1, Bobrenko, Yu. N.1
Publikováno v:
Semiconductors. Mar2006, Vol. 40 Issue 3, p327-330. 4p. 1 Diagram, 2 Graphs.
Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 5, № 1 (2008); 26-31
Сенсорная электроника и микросистемные технологии; Том 5, № 1 (2008); 26-31
Сенсорна електроніка і мікросистемні технології; Том 5, № 1 (2008); 26-31
Сенсорная электроника и микросистемные технологии; Том 5, № 1 (2008); 26-31
Сенсорна електроніка і мікросистемні технології; Том 5, № 1 (2008); 26-31
A potential distribution along a transient constituent of heterojunction was calculated at threshold luminosity. Effective length of collecting was determinated in a surface barrier structure at the low levels of irradiation. Theoretical expressions