Výsledky vyhledávání - "Kolomoets, V.V."

Akademický článek

Thermal donors and radiation-induced defect states in transmutation doped gamma-irradiated silicon

Autor: Budzulyak, S.I, Dotsenko, Yu.P, Ermakov, V.M, Kolomoets, V.V ^*, Venger, E.F

Publikováno v: In Physica B: Physics of Condensed Matter 2001 308:325-328

Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Autor: Ermakov, V.M., Kolomoets, V.V., Panasyuk, L.I., Nazarchuk, P.F., Yashchynskiy, L.V.

The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::e833fbc4053b4220c8dc614e1eae75a1
http://dspace.nbuv.gov.ua/handle/123456789/118279

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Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

Autor: Dotsenko, Yu.P., Ermakov, V.M., Gorin, A.E., Khivrych, V.I., Kolomoets, V.V., Machulin, V.F., Panasjuk, L.I., Prokopenko, I.V., Sus', B.B., Venger, E.F.

Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::df753500996cb58701dd81adff66b3e1
http://dspace.nbuv.gov.ua/handle/123456789/117987

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Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Autor: Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F.

Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::a3ee69c99de1904748566d97f1d419bc
http://dspace.nbuv.gov.ua/handle/123456789/117939

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Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors

Autor: Venger, Ye.F., Kolomoets, V.V., Machulin, V.F.

The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns of specimens. An appearance of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::d136317c03619ef577c2effaa5fc972c
http://dspace.nbuv.gov.ua/handle/123456789/121177

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Akademický článek

Strain-Induced MI Transition in n-Si and n-Ge: Physical Mechanisms and Transport Phenomena.

Autor: Budzulyak, S.I., Gorin, A.E., Ermakov, V.M., Kolomoets, V.V., Venger, E.F., Verma, P., Yamada, M., Liarokapis, E., Tunstall, D.P.

Publikováno v: Physica Status Solidi (B); Jan2001, Vol. 223 Issue 2, p519-523, 5p

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Periodical

Breakdown of Donor Localized States on the Insulating Side of Strain-Induced MI Transitions in Si and Ge

Autor: Budzulyak, S.I., Dotsenko, J.P., Gorin, A.E., Kolomoets, V.V., Machulin, V.F., Ermakov, V.N., Venger, E.F., Liarokapis, E., Tunstall, D.P.

Publikováno v: Physica Status Solidi (B) - Basic Solid State Physics; January 1999, Vol. 211 Issue: 1 p137-142, 6p

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Akademický článek

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