Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Kolhatkar, J.S."'
Publikováno v:
Proceedings SAFE & ProRISC 2004, 700-703
STARTPAGE=700;ENDPAGE=703;TITLE=Proceedings SAFE & ProRISC 2004
STARTPAGE=700;ENDPAGE=703;TITLE=Proceedings SAFE & ProRISC 2004
Periodically switching the MOSFET ‘off’ (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::8574b1d40b149b0c64ce50d0f0db7fed
https://research.utwente.nl/en/publications/investigating-hotcarrier-degradation-in-mosfets-using-constant-and-switched-biased-lowfrequency-noise-measurements(9eca4f9d-90c0-4712-b8d0-fc6b840fba87).html
https://research.utwente.nl/en/publications/investigating-hotcarrier-degradation-in-mosfets-using-constant-and-switched-biased-lowfrequency-noise-measurements(9eca4f9d-90c0-4712-b8d0-fc6b840fba87).html
Publikováno v:
Proceedings SAFE & ProRISC 2004
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced. In this paper, we present different visualizations of the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::dac7ebfa1e011a2d659fde8374ea3268
https://research.utwente.nl/en/publications/visualisation-techniques-for-random-telegraph-signals-in-mosfets(51a58ed3-7302-46a4-bcfa-1f5cd7404713).html
https://research.utwente.nl/en/publications/visualisation-techniques-for-random-telegraph-signals-in-mosfets(51a58ed3-7302-46a4-bcfa-1f5cd7404713).html
Publikováno v:
Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 614-617
STARTPAGE=614;ENDPAGE=617;TITLE=Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003
STARTPAGE=614;ENDPAGE=617;TITLE=Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003
The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched ‘off’. The amoun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::740ccd9cec99d99cbf480558cf1a2ee4
https://research.utwente.nl/en/publications/separation-of-random-telegraph-signals-from-1f-noise-in-mosfets(126c53cc-7732-4a29-81fa-2fdc43ebe8b1).html
https://research.utwente.nl/en/publications/separation-of-random-telegraph-signals-from-1f-noise-in-mosfets(126c53cc-7732-4a29-81fa-2fdc43ebe8b1).html
Autor:
Kolhatkar, J.S., Salm, Cora
Publikováno v:
MESA+ Day 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::c80e8b3bfc2887ef23ee12ba2d3ce401
https://research.utwente.nl/en/publications/random-telegraph-signals-monitoring-single-electron-jumps(633122d5-c2d6-4b0f-b177-7c9d3b84dbb5).html
https://research.utwente.nl/en/publications/random-telegraph-signals-monitoring-single-electron-jumps(633122d5-c2d6-4b0f-b177-7c9d3b84dbb5).html
Autor:
Kolhatkar, J.S., van der Wel, A.P., Klumperink, Eric A.M., Salm, Cora, Nauta, Bram, Wallinga, Hans
Publikováno v:
17th International Conference on Noise and Fluctuations, 237-240
STARTPAGE=237;ENDPAGE=240;TITLE=17th International Conference on Noise and Fluctuations
STARTPAGE=237;ENDPAGE=240;TITLE=17th International Conference on Noise and Fluctuations
With decreasing device dimensions, the low-frequency noise power spectrum of MOSFETs is dominated by Lorentzians, arising from Random Telegraph Signals (RTS). Previously, it was shown that the low-frequency noise of MOSFETs decreases, if the transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::a8d14b7dd2d64347f245c242ad077d39
https://research.utwente.nl/en/publications/measurement-and-extraction-of-rts-parameters-under-switched-biased-conditions-in-mosfets(fe1a4877-96a8-4b80-80ba-5a2024e8820e).html
https://research.utwente.nl/en/publications/measurement-and-extraction-of-rts-parameters-under-switched-biased-conditions-in-mosfets(fe1a4877-96a8-4b80-80ba-5a2024e8820e).html
Publikováno v:
Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002, 42-45
STARTPAGE=42;ENDPAGE=45;TITLE=Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
ISSUE=5;STARTPAGE=42;ENDPAGE=45;TITLE=5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
STARTPAGE=42;ENDPAGE=45;TITLE=Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
ISSUE=5;STARTPAGE=42;ENDPAGE=45;TITLE=5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
With decreasing device dimensions of MOSFETs, the nature of the low-frequency noise spectrum is a Lorentzian. This type of spectrum is due to Random Telegraph Signals (RTS), whose origin can be attributed to the random trapping and de-trapping of mob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f90f1a45932cc65f45510b1c47a922fb
https://research.utwente.nl/en/publications/analysis-of-switched-biased-random-telegraph-signals-in-mosfets(6ebba456-0947-48a7-85ca-d3af406aca6c).html
https://research.utwente.nl/en/publications/analysis-of-switched-biased-random-telegraph-signals-in-mosfets(6ebba456-0947-48a7-85ca-d3af406aca6c).html
Publikováno v:
Proceedings of the 32nd European Solid-State Device Research Conference, 83-86
STARTPAGE=83;ENDPAGE=86;TITLE=Proceedings of the 32nd European Solid-State Device Research Conference
STARTPAGE=83;ENDPAGE=86;TITLE=Proceedings of the 32nd European Solid-State Device Research Conference
The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3afb288aeca3f598f98096380c645bd7
https://doi.org/10.1109/essderc.2002.194876
https://doi.org/10.1109/essderc.2002.194876
Autor:
Wang, Zhichun, Bankras, R.G., Isai, I.G., Kolhatkar, J.S., Hof, A.J., Salm, Cora, Kuper, F.G., Woerlee, P.H., Holleman, J.
Publikováno v:
MESA+ Day 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::2084c5d7d4b26f3a747d779495ea0623
https://research.utwente.nl/en/publications/oxides-why-dont-they-isolate(331c8ad2-7b33-4431-9a93-daef615d6848).html
https://research.utwente.nl/en/publications/oxides-why-dont-they-isolate(331c8ad2-7b33-4431-9a93-daef615d6848).html
Publikováno v:
Proceedings of the SAFE Conference, 92-95
STARTPAGE=92;ENDPAGE=95;TITLE=Proceedings of the SAFE Conference
STARTPAGE=92;ENDPAGE=95;TITLE=Proceedings of the SAFE Conference
MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off��
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::062566f976707650858d8e650fd7d760
https://research.utwente.nl/en/publications/1f-noise-and-switched-bias-noise-measurement-in-pmosfet-with-varying-gate-oxide-thickness(dedd9d8b-8800-4a06-a843-261f98f79d97).html
https://research.utwente.nl/en/publications/1f-noise-and-switched-bias-noise-measurement-in-pmosfet-with-varying-gate-oxide-thickness(dedd9d8b-8800-4a06-a843-261f98f79d97).html