Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Koleilat GI"'
Autor:
Madhu S; Department of Engineering, Faculty of Agriculture, Dalhousie University, Truro, B2N 5E3, NS, Canada., MacKenzie J; Department of Engineering, Faculty of Agriculture, Dalhousie University, Truro, B2N 5E3, NS, Canada., Grewal KS; Faculty of Sustainable Design Engineering, University of Prince Edward Island, Charlottetown, PE, C1A4P3, Canada., Farooque AA; Faculty of Sustainable Design Engineering, University of Prince Edward Island, Charlottetown, PE, C1A4P3, Canada.; Canadian Centre for Climate Change and Adaptation, University of Prince Edward Island, St Peters Bay, PE, Canada., Koleilat GI; Department of Process Engineering and Applied Science, & Department of Electrical and Computer Engineering, Dalhousie University, Halifax, 5273 Dacosta Row, B3H 4R2, Canada., Selopal GS; Department of Engineering, Faculty of Agriculture, Dalhousie University, Truro, B2N 5E3, NS, Canada.
Publikováno v:
ChemSusChem [ChemSusChem] 2024 May 28, pp. e202400421. Date of Electronic Publication: 2024 May 28.
Autor:
Kahwagi RF; Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada., Thornton ST; Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada., Smith B; Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada., Koleilat GI; Department of Chemical Engineering, Dalhousie University, Halifax, Nova Scotia, B3J 1Z1, Canada. ghada.koleilat@dal.ca.
Publikováno v:
Frontiers of optoelectronics [Front Optoelectron] 2020 Sep; Vol. 13 (3), pp. 196-224. Date of Electronic Publication: 2020 Aug 06.
Autor:
Koleilat GI; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Vosgueritchian M; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Lei T; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Zhou Y; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Lin DW; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Lissel F; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Lin P; School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, People's Republic of China., To JW; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Xie T; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., England K; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States., Zhang Y; School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, People's Republic of China., Bao Z; Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States.
Publikováno v:
ACS nano [ACS Nano] 2016 Dec 27; Vol. 10 (12), pp. 11258-11265. Date of Electronic Publication: 2016 Dec 01.
Autor:
Chortos A; Materials Science and Engineering Department, Stanford University, 496 Lomita Mall, Stanford, CA, 94305-4034, USA., Koleilat GI; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA., Pfattner R; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA., Kong D; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA., Lin P; Materials Physics and Chemistry, University of Science and Technology, Beijing, Haidian, Beijing, 100083, P. R. China., Nur R; Electrical Engineering Department, Stanford University, 350 Serra Mall, Stanford, CA, 94305, USA., Lei T; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA., Wang H; Materials Science and Engineering Department, Stanford University, 496 Lomita Mall, Stanford, CA, 94305-4034, USA., Liu N; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA., Lai YC; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.; Department of Physics, National Taiwan University, Taipei, 10617, Taiwan, P. R. China., Kim MG; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.; Department of Chemistry, Chung-Ang University, 221 Heukseok-dong, Dongjak-gu, Seoul, 156-756, South Korea., Chung JW; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.; Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, South Korea., Lee S; Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, South Korea., Bao Z; Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2016 Jun; Vol. 28 (22), pp. 4441-8. Date of Electronic Publication: 2015 Jul 14.
Autor:
Zhou Y; Department of Chemical Engineering, Stanford University, Stanford, California, 94305, USA., Kurosawa T, Ma W, Guo Y, Fang L, Vandewal K, Diao Y, Wang C, Yan Q, Reinspach J, Mei J, Appleton AL, Koleilat GI, Gao Y, Mannsfeld SC, Salleo A, Ade H, Zhao D, Bao Z
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2014 Jun 11; Vol. 26 (22), pp. 3767-72. Date of Electronic Publication: 2014 Mar 24.
Autor:
Wang H; Department of Materials Science & Engineering, Stanford University , Stanford, California 94305, United States., Koleilat GI, Liu P, Jiménez-Osés G, Lai YC, Vosgueritchian M, Fang Y, Park S, Houk KN, Bao Z
Publikováno v:
ACS nano [ACS Nano] 2014 Mar 25; Vol. 8 (3), pp. 2609-17. Date of Electronic Publication: 2014 Feb 10.
Autor:
Wang H, Koleilat GI, Liu P, Jiménez-Osés G, Lai YC, Vosgueritchian M, Fang Y, Park S, Houk KN, Bao Z
Publikováno v:
ACS nano [ACS Nano] 2014; Vol. 8 (7), pp. 7550. Date of Electronic Publication: 2014 Jul 02.
Autor:
Lan X; Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada., Bai J, Masala S, Thon SM, Ren Y, Kramer IJ, Hoogland S, Simchi A, Koleilat GI, Paz-Soldan D, Ning Z, Labelle AJ, Kim JY, Jabbour G, Sargent EH
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2013 Mar 25; Vol. 25 (12), pp. 1769-73. Date of Electronic Publication: 2013 Jan 06.
Autor:
Koleilat GI; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada., Kramer IJ, Wong CT, Thon SM, Labelle AJ, Hoogland S, Sargent EH
Publikováno v:
Scientific reports [Sci Rep] 2013; Vol. 3, pp. 2166.
Autor:
Koleilat GI; Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada., Wang X, Sargent EH
Publikováno v:
Nano letters [Nano Lett] 2012 Jun 13; Vol. 12 (6), pp. 3043-9. Date of Electronic Publication: 2012 May 10.