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pro vyhledávání: '"Koki Ohyama"'
Autor:
Ji Zhang, Terutake Hayashi, Yasuhisa Sano, Asakawa Eiji, Syuhei Kurokawa, Cheng Wu Wang, Koki Ohyama, Toshiro Doi, Michio Uneda, Osamu Ohnishi, Hideo Aida
Publikováno v:
Applied Mechanics and Materials. :458-462
In this paper, lapped C-face of single crystal SiC wafer was irradiated by femtosecond laser. Chemical mechanical polishing (CMP) was then carried out to polish the irradiated SiC C-face. The authors compared the results of femtosecond laser-assisted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25b315c6fb8ace6fe603500ff0d1733
https://doi.org/10.4028/www.scientific.net/amm.799-800.458
https://doi.org/10.4028/www.scientific.net/amm.799-800.458
