Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Kok-Keong Lew"'
Autor:
Charles R. Eddy, Mario G. Ancona, D. K. Gaskill, R. L. Myers-Ward, Brenda L. VanMil, Karl D. Hobart, Kok Keong Lew, Fritz J. Kub, Eugene A. Imhoff
Publikováno v:
IEEE Transactions on Electron Devices. 58:3395-3400
A novel taper-doping anode termination method is introduced for high-voltage silicon carbide devices. The method employs a subresolution two-tone termination mask to achieve a gray-scale exposure and a smoothly tapered photoresist profile. Using the
Autor:
D. Kurt Gaskill, Charles R. Eddy, Paul B. Klein, Kok Keong Lew, Jaime A. Freitas, Tangali S. Sudarshan, Serguei I. Maximenko, Yoosuf N. Picard, Peter G. Muzykov, Rachael L. Myers-Ward
Publikováno v:
Materials Science Forum. :211-214
The effect of various types of in-grown stacking faults and threading screw/edge type dislocations on carrier lifetime and diffusion lengths in 4H-SiC epitaxial films was investigated through cathodoluminescence decays and charge collection efficienc
Autor:
D. Kurt Gaskill, Paul B. Klein, Rachael L. Myers-Ward, Amitesh Shrivastava, Charles R. Eddy, Tangali S. Sudarshan, Brenda L. VanMil, Kok Keong Lew
Publikováno v:
Materials Science Forum. :203-206
The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z
Autor:
Xi Zhang, Pramod Nimmatoori, Elizabeth C. Dickey, Joan M. Redwing, Ling Pan, Kok Keong Lew, Qi Zhang, Trevor Clark
Publikováno v:
ECS Transactions. 25:1145-1152
Si and Si1-xGex nanowires are of interest for nanoscale electronics, sensors and photovoltaics. These structures are commonly formed by chemical vapor deposition via a metal-mediated vapor-liquid-solid mechanism using SiH4 and GeH4 sources. The effec
Autor:
Brenda L. VanMil, D. K. Gaskill, L. Wang, Ronald T. Holm, C. R. Eddy, Kok Keong Lew, R. L. Myers-Ward, Pei Zhao
Publikováno v:
Journal of Crystal Growth. 311:238-243
During the growth of silicon carbide (SiC) by hot-wall chemical vapor deposition, there is a competition between etching and growth processes due to hydrogen etching of the SiC surface, which is a function of temperature and the etching atmosphere. T
Autor:
Brenda L. VanMil, Marek Skowronski, Kendrick X. Liu, Charles R. Eddy, X. Zhang, Kok Keong Lew, D. Kurt Gaskill, Rachael L. Myers-Ward, Robert E. Stahlbush
Publikováno v:
Materials Science Forum. :317-320
The evolution of basal plane dislocations (BPDs) in 4H-SiC epitaxy during its growth is investigated by using two types of interrupted growth in conjunction with ultraviolet photoluminescence (UVPL) imaging of the dislocations. For the first, each ep
Autor:
Brenda L. VanMil, Jun Hu, D. Kurt Gaskill, Jian Hui Zhao, Kok Keong Lew, Petre Alexandrov, Xiao Bin Xin, Rachael L. Myers-Ward, Charles R. Eddy
Publikováno v:
Materials Science Forum. :1203-1206
This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark current of 57.2
Autor:
Charles R. Eddy, D. Kurt Gaskill, Mohammad Fatemi, Joshua D. Caldwell, Brenda L. VanMil, Paul B. Klein, Ping Wu, Kok Keong Lew, Kendrick X. Liu, Rachael L. Myers-Ward, Robert E. Stahlbush
Publikováno v:
Materials Science Forum. :481-484
X-ray diffraction (XRD) rocking curves were mapped across 4H-SiC, 3-inch, 8° off-cut substrates prior to and after epitaxial growth, where a pattern of slightly higher defectivity region was clearly seen. This same pattern was apparent in both cross
Autor:
Rachael M. Ward, David Null, Swapna Sunkari, Paul B. Klein, Kok Keong Lew, David C. Sheridan, Evan R. Glaser, Jie Zhang, Janice Mazzola, D. Kurt Gaskill, Michael S. Mazzola, Volodymyr Bondarenko, Igor Sankin, G. J. Stewart
Publikováno v:
Materials Science Forum. :103-106
Epitaxial growth of 3-in, 4° off-axis 4H SiC with addition of HCl has been presented. Good surface morphology with a low defect density has been obtained, even for epi thickness of 38 µm. Comprehensive characterization techniques conducted on the e
Autor:
D. K. Gaskill, Xiaobin Xin, Kok Keong Lew, Jian Hui Zhao, Xueqing Li, Jun Hu, C. R. Eddy, Brenda L. VanMil, R. L. Myers-Ward
Publikováno v:
IEEE Transactions on Electron Devices. 55:1977-1983
This paper reports on a 4H-SiC single-photon avalanche diode (SPAD) operating at UV wavelengths of 280 and 350 nm. The SPAD shows low dark currents of 20 and 57 fA at 80 V and 90% breakdown voltage, respectively. The quantum efficiency (QE) reaches i