Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kojiro Itoh"'
Publikováno v:
Inorganic Chemistry. 39:806-809
Transition metal nitride halides MNX (M = Zr, Hf; X = Cl, Br, I) have two types of layer structured polymorphs, the alpha-form with the FeOCl type and the beta-form with the SmSI type. Both polymorphs consist of corrugated double M-N layers sandwiche
Autor:
Kaoru Koike, Shinji Kunitani, Hiroshi Sugimura, Hiroshi Arimoto, Kojiro Itoh, Toshiaki Kurosu, Kentaro Ogawa, Takashi Susa, Hideyuki Eguchi, Akira Tamura, Takashi Yoshii, Hiroshi Sakaue
Publikováno v:
SPIE Proceedings.
We examined two EPL mask fabrication processes to control precisely image placement (IP) on the EPL masks. One is a wafer process using an electrostatic chuck during an e-beam write and another is a membrane process using a mechanical chuck during th
Publikováno v:
SPIE Proceedings.
The process of inspection and repair for LEEPL masks is increasingly required. A stencil mask inspection system EBScanner (Tokyo Seimitsu), using transmission electron beam, was investigated defect inspection capability on LEEPL masks. We fabricated
Autor:
Takashi Susa, Tomoya Sumida, Kojiro Itoh, Toshiaki Kurosu, Akira Tamura, Hiroshi Sugimura, Kenta Yotsui, Hideyuki Eguchi, Takashi Yoshii
Publikováno v:
SPIE Proceedings.
Two types of strut-supported low energy electron-beam proximity projection lithography (LEEPL) masks which are grid-type mask and COSMOS-type mask, were investigated for Global image placement (IP). First, we evaluated the dynamic repeatability measu
Publikováno v:
SPIE Proceedings.
We manufactured LEEPL masks for 65-nm node and evaluated the masks for the critical dimension (CD), image placement (IP) and defects. Although the CD uniformity was 8.0 nm (3σ), an improvement is promising by resist upgrading. The CD linearity was w
Autor:
Takashi Susa, Akira Tamura, Shinji Omori, Tetsuya Kitagawa, Kojiro Itoh, Tomonori Motohashi, Kenta Yotsui, Shinichiro Nohdo
Publikováno v:
SPIE Proceedings.
A production-compatible method for the correction of image-placement (IP) error over a 1x stencil mask as used for proximity electron lithography (PEL) has been demonstrated. The mask IP error as measured using a newly developed metrology tool was fe
Autor:
Tetsuya Kitagawa, Kojiro Itoh, Satoru Maruyama, Kazuya Iwase, Kenta Yotsui, Shinji Omori, Shoji Nohama, Shigeru Moriya, Akira Tamura, Gaku Suzuki, Yushin Sasaki
Publikováno v:
SPIE Proceedings.
We report the first evaluation results for the printability and detectability of mask defects on a 1x stencil mask as used for proximity electron lithography (PEL). The defect printability has been defined for the patterns after the multi-step etchin
Autor:
Toshiaki Kurosu, Kojiro Itoh, Akira Tamura, Hideyuki Eguchi, Hiroshi Sugimura, Takashi Yoshii
Publikováno v:
SPIE Proceedings.
Membrane stress control is one of the challenges for the commercial success of the stencil masks, such as electron projection lithography (EPL) and low energy electron-beam proximity projection lithography (LEEPL), since a stencil mask has perforatio
Autor:
Hiroshi Sugimura, Akira Tamura, Kojiro Itoh, Takashi Yoshii, Toshiaki Kurosu, Hideyuki Eguchi
Publikováno v:
SPIE Proceedings.
We focus on stencil mask technologies for the next generation lithography (NGL) options such as electron projection lithography (EPL) and low energy electron-beam proximity projection lithography (LEEPL). For the production of high-quality stencil ma