Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Koji Yoshitsugu"'
Autor:
Shuichi Hiza, Ken Imamura, Yusuke Shirayanagi, Koji Yoshitsugu, Yuki Takiguchi, Kunihiko Nishimura, Hideki Takagi, Hideaki Yamada, Akihisa Kubota, Mikio Yamamuka
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 142:354-359
Autor:
Takuya Shibata, Mutsunori Uenuma, Takahiro Yamada, Koji Yoshitsugu, Masato Higashi, Kunihiko Nishimura, Yukiharu Uraoka
Publikováno v:
Japanese Journal of Applied Physics. 61:065502
In this study, the effects of carbon impurity in the atomic layer deposited-Al2O3 film on the hard X-ray photoelectron spectroscopy (HAXPES) spectra and the electrical properties of metal–insulator–semiconductor (MIS) structure were measured. The
Autor:
Hirokuni Tokuda, Yohei Kobayashi, Joel T. Asubar, Yukiharu Uraoka, Masaaki Kuzuhara, Koji Yoshitsugu, Zenji Yatabe, Tamotsu Hashizume, Masahiro Horita
Publikováno v:
IEEE Transactions on Electron Devices. 62:2423-2428
We have demonstrated for the first time a remarkable reduction of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) by high-pressure water vapor annealing (HPWVA). The device subjected to HPWVA exhibited considerably low dynami
Publikováno v:
ECS Transactions. 67:205-210
This paper reports an effect of post annealing technique for the deposited dielectric films utilizing high pressure deuterium oxide. Al2O3 deposited on Si thermal oxide film by plasma-assisted atomic layer deposition (PA-ALD), which can have the adva
Autor:
Yukiharu Uraoka, Mami N. Fujii, Yasuaki Ishikawa, Yoshihiro Ueoka, Jun Tanaka, Koji Yoshitsugu, Hiroshi Tanabe, Kazushige Takechi
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:Q61-Q65
We investigated the effects of the passivation layer on the characteristics of amorphous InGaZnO4 thin-film transistors (a-InGaZnO TFTs) by comparing AlOx film by thermal atomic layer deposition (TALD-AlOx) with SiOx film by plasma enhanced chemical
Publikováno v:
physica status solidi c. 10:1426-1429
This paper briefly reviews the characterizations of Al2O3 gate dielectric deposited by plasma-assisted atomic layer deposition (PA-ALD) on n-GaN. We report on insulating and physical properties of PA-ALD Al2O3 film from I-V characteristics of metal-i
Autor:
Ichiro Ueno, Koji Yoshitsugu
Publikováno v:
Journal of Visualization. 14:285-294
We have been interested in behaviors of suspended particles in a volatile droplet placed on a smooth substrate. It is known that the particles gather and deposit in the vicinity of the macroscopic contact line of the droplet, which is generally calle
Autor:
K. Ohara, Yasuaki Ishikawa, Nozomu Hattori, Koji Yoshitsugu, Yukiharu Uraoka, Masahiro Horita
Publikováno v:
2012 IEEE International Meeting for Future of Electron Devices, Kansai.
Al 2 O 3 thin films were deposited by plasma-assisted atomic layer deposition (PA-ALD), which can have the advantage of low temperature process. Then high pressure deuterium oxide annealing (HPDOA) was performed for reforming qualities of the PA-ALD
Autor:
Jun Tanaka, Yoshihiro Ueoka, Koji Yoshitsugu, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kazushige Takechi, Hiroshi Tanabe
Publikováno v:
ECS Journal of Solid State Science & Technology; 2015, Vol. 4 Issue 7, pQ61-Q65, 5p