Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Koji Tsuchie"'
Autor:
Tomoki Higashi, N. Yoshida, T. Watanabe, Jun Hasegawa, H. Hatanoz, K. Seki-Fukuda, K. Noguchiz, R. Bandar, T. Fujita, Koji Tsuchie, K. Shinohara, Toshio Fujisawa, Toshitada Saito, Tatsuo Shiozawa, T. Aikawa, Yasuo Unekawa
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:2001-2009
An 802.11a compliant medium access control (MAC) and physical layer (PHY) processing chip has been successfully fabricated in 0.18-/spl mu/m CMOS. Thirty million transistors are integrated on a 10.91/spl times/10.91 mm/sup 2/ die housed in a 361-pin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a01b46129ee4834c89ac6e71ac0751a5
https://doi.org/10.1109/jssc.2003.818135
https://doi.org/10.1109/jssc.2003.818135
Publikováno v:
Applied Surface Science. :42-47
Adsorptions of monovalent atoms (noble and alkali metals) of submonolayer coverages (0.1–0.2 ML) on the Si(111)-√3×√3-Ag surface commonly induced similar √21×√21 superstructures, all of which exhibited high electrical conductances. Common
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20df15e607df4de88e6917f1fd1be00f
https://doi.org/10.1016/s0169-4332(00)00168-9
https://doi.org/10.1016/s0169-4332(00)00168-9
Publikováno v:
Physical Review B. 60:11131-11136
The structure of a monolayer of ${\mathrm{C}}_{60}$ molecules adsorbed on the $\mathrm{Si}(111)\ensuremath{-}\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}\ensuremath{-}\mathrm{Ag}$ surface has been investigated by scanning tunneling microscopy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca47bc46554425714324f4aa730a7a02
https://doi.org/10.1103/physrevb.60.11131
https://doi.org/10.1103/physrevb.60.11131
Structural phase transitions ofSi(111)−(3×3)R30°−Au: Phase transitions in domain-wall configurations
Autor:
Koji Tsuchie, Martin Henzler, C. Voges, G. Klos, Shozo Ino, Herbert Pfnür, Tadaaki Nagao, S. Hasegawa
Publikováno v:
Physical Review B. 57:10100-10109
Behaviors of domain walls on the Au-adsorbed $\mathrm{Si}(111)\ensuremath{-}\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}$ and $6\ifmmode\times\else\texttimes\fi{}6$ surfaces have been investigated by spot-profile-analyzing low-energy electron d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed0f98d3fbabc4158a2ced4ec2333835
https://doi.org/10.1103/physrevb.57.10100
https://doi.org/10.1103/physrevb.57.10100
Autor:
T. Shimada, Toshio Fujisawa, K. Matsue, N. Kato, Minoru Namekata, Takashi Ueno, T. Aono, S. Kaburaki, Masahiro Sekiya, Yasuo Unekawa, Takashi Wakutsu, T. Kamimura, Hirotsugu Kajihara, Toshitada Saito, Masaaki Ikuta, Tatsuo Shiozawa, Koji Tsuchie, Kouji Horisaki, Yukimasa Miyamoto, Akira Yamaga, Hideaki Nakakita, K. Shimizu, Masanori Kuwahara, Daisuke Taki, S. Yamazaki
Publikováno v:
2005 IEEE Asian Solid-State Circuits Conference.
This paper presents the first wireless LAN baseband LSI capable of transmitting high-definition audio with video (HD-A/V) content requiring secure content protection. The LSI fully complies with IEEE 802.11a, e, h, and i. The hybrid coordination func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed69b13ba10b19d7286ae1fbd1858ca
https://doi.org/10.1109/asscc.2005.251780
https://doi.org/10.1109/asscc.2005.251780