Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Koji Takayanagi"'
Publikováno v:
Journal of Japan Association on Odor Environment. 49:180-186
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6:364-372
Design techniques for 3-D SoC stacked with a Wide I/O DRAM with through silicon via (TSV) technology were developed. Some of the developed techniques were applied to design a Wide I/O DRAM controller chip. Micro-I/O cells and area efficient decouplin
Autor:
Takao Nomura, Tsuyoshi Kida, Kazuki Fukuoka, Koji Nii, Sadayuki Morita, Kentaro Mori, Toshihiko Ochiai, Ryo Mori, Koji Takayanagi
Publikováno v:
2014 International Conference on Electronics Packaging (ICEP).
A Wide IO DRAM controller chip with Through Silicon Via (TSV) technology is implemented. Test circuitry for prebonding TSV tests are embedded in between the fine pitch TSVs. In order to reduce Vmin degradation induced by 512 DQs simultaneously switch
Autor:
Koji Takayanagi, Yoshiharu Nakamura
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 121:471-476
Autor:
Tsuyoshi Kida, Kazuki Fukuoka, Junichi Yamada, Takao Nomura, Hideki Tanaka, Tomoaki Hashimoto, Munehiro Ito, Koji Takayanagi, Koji Nii, Ryo Mori, Sadayuki Morita, Kazuo Otsuga, Toshihiko Ochiai
Publikováno v:
CICC
We developed a Wide IO DRAM controller chip with Through Silicon Via (TSV) technology. Test circuitry is embedded in the micro-IOs placed between the fine pitch TSVs which can reject TSV connectivity failures prior to stacking process. In order to re
Autor:
Koji Takayanagi, Ryouichi Uemura, Tomohiro Iseki, Kosuke Yoshihara, Yuichi Yoshida, Hiroshi Marumoto, Keiichi Tanaka
Publikováno v:
SPIE Proceedings.
Defect reduction has become one of the most important technical challenges in device mass-production. Knowing that resist processing on a clean track strongly impacts defect formation in many cases, we have been trying to improve the track process to
Autor:
Takahiro Okubo, Kouzo Nishi, Koji Takayanagi, Toshinobu Furusho, Kosuke Yoshihara, Tsuyoshi Shibata, Yusuke Yamamoto
Publikováno v:
SPIE Proceedings.
As pattern size becomes smaller, requirement for defect reduction is getting higher and higher. It is known that defects occur in various steps of lithography process. In this study, we focus on defects related to the resist dispense system. Of those
Autor:
Jun-ichi Onodera, Hiroyuki Watanabe, Shingo Sato, Koji Takayanagi, Heitaro Obara, Kimio Furuhata, Shigeru Matsuba, Toshihiro Kumazawa
Publikováno v:
ChemInform. 33
Carthamin acetate, (3S,3′S)-1-[5-(p-acetoxycinnamoyl)-3-C-(β-D-2″,3″,4″,6″-tetra-O-acetylglucopyranosyl)-3,4-dihydroxy-2,6-diketo]cyclohex-4-enylidene-1′-[5′-(p-acetoxycinnamoyl)-3′-C-(β-D-2″′,3″′,4″′, 6″′-tetra-O-ac
Autor:
Kimio Furuhata, Jun-ichi Onodera, Hiroyuki Watanabe, Shigeru Matsuba, Shingo Sato, Koji Takayanagi, Heitaro Obara, Toshihiro Kumazawa
Publikováno v:
Chemistry Letters. 30:1318-1319
Carthamin acetate, (3S,3′S)-1-[5-(p-acetoxycinnamoyl)-3-C-(β-D-2″,3″,4″,6″-tetra-O-acetylglucopyranosyl)-3,4-dihydroxy-2,6-diketo]cyclohex-4-enylidene-1′-[5′-(p-acetoxycinnamoyl)-3′-C-(β-D-2″′,3″′,4″′, 6″′-tetra-O-ac