Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Koji TATSUMI"'
Publikováno v:
Journal of Smart Processing. 11:227-232
Publikováno v:
IMAPSource Proceedings. 2022
The various kinds of the packaging technologies such as 2.nD, 2.5D, 3D are highly studied with the rapid development of miniaturization and high density of semiconductor packaging. This trend increases the importance of fine pitch interconnect. To ac
Autor:
Takashi Nara, Koji Tatsumi
Publikováno v:
Anthropological Science (Japanese Series). 129:53-74
Publikováno v:
International Symposium on Microelectronics. 2016:000638-000643
SnAg electroplating method is widely used in the formation of LF solder bump for flip chip connection. While electroplating is able to form void free solder bump in a suitable operating condition, void may occur suddenly when used in mass production.
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:001643-001669
Solder bumping is one of the key technologies for flip chip connection. Flip chip connection has been moving forward to its further downsizing and higher integration with new technologies, such as Cu pillar, micro bump and Through Silicon Via (TSV).
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:000751-000777
Flip chip connection has been applied to a lot of applications in order to shorten the connection length of high performance devices. Solder bumping is one of the key technologies for flip chip connections, and its quality makes a large impact on the
Publikováno v:
Key Engineering Materials. 470:129-134
Using a new wet process based on a catalytic reaction, pores and grooves were formed in Si using Au, Pt, or Ag as the catalyst. The diameter of the pore can be as small as 50 nm. However, to produce wiring in Si wafers, we primarily formed pores with
Autor:
Kimiko Ema, Takaya Terada, Yoko Akiyama, Yoshinobu Izumi, Sung-Jin Yu, Koji Tatsumi, Shinichi Takeda, Shigehiro Nishijima
Publikováno v:
Journal of Life Support Engineering. 16:309-310
Publikováno v:
Journal of The Electrochemical Society. 147:3592
Li[CrTi]O 4 (Fd3m; a = 8.32 A) having a spinel-framework structure was prepared and examined in nonaqueous lithium cells. Li/Li[CrTi]O 4 cells showed the flat operating voltages of 1.50 V and rechargeable capacity of 150 mAh/g. The X-ray diffraction