Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Koji Shiozaki"'
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065215-065215-5 (2020)
Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, fol
Externí odkaz:
https://doaj.org/article/7a555c14c590414aa052ec0cd678980c
Publikováno v:
IEEJ Journal of Industry Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2ed80b83bc5b07065633e6ca84d187
https://doi.org/10.1541/ieejjia.22007958
https://doi.org/10.1541/ieejjia.22007958
Autor:
Kazuhito Tsukagoshi, Toshihide Nabatame, Takashi Onaya, Mari Inoue, Koji Shiozaki, Tamotsu Hashizume, Tomomi Sawada, Ryota Ochi, Yasuo Koide, Erika Maeda, Masafumi Hirose, Yoshihiro Irokawa
Publikováno v:
ECS Transactions. 104:113-120
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4296c423ba56c2a024a5de3bce41df7
https://doi.org/10.1149/10404.0113ecst
https://doi.org/10.1149/10404.0113ecst
Publikováno v:
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26341df808bae8dbb0ef67b75a349e1d
https://doi.org/10.23919/ipec-himeji2022-ecce53331.2022.9806956
https://doi.org/10.23919/ipec-himeji2022-ecce53331.2022.9806956
Autor:
Toshihide Nabatame, Erika Maeda, Yasuo Koide, Yoshihiro Irokawa, Mari Inoue, Hajime Kiyono, Koji Shiozaki, Masafumi Hirose
Publikováno v:
ECS Transactions. 92:109-117
We systematically investigated characteristics of Pt-gated capacitors with four kinds of gate insulators such as Hf0.57Si0.43Ox, Hf0.64Si0.36Ox, HfO2, and Al2O3. The Hf0.64Si0.36Ox films fabricated by post-deposition annealing (PDA) at 800°C in O2 (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff33bb86f7550e01b410143b0047f6fb
https://doi.org/10.1149/09204.0109ecst
https://doi.org/10.1149/09204.0109ecst
Autor:
Ryota Ochi, Erika Maeda, Toshihide Nabatame, Yasuo Koide, Tamotsu Hashizume, Yoshihiro Irokawa, Mari Inoue, Koji Shiozaki
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) and vertical GaN metal-oxide-semiconductor (MOS) devices have potential application to high power and high frequency because of their superior characteristics, such as wide band gap (B g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322e3b473d48d4308b393ca2e56ae92e
https://doi.org/10.23919/iwjt52818.2021.9609469
https://doi.org/10.23919/iwjt52818.2021.9609469
Autor:
Hiroyasu Akatuka, Shota Hori, Shen Wang, Shinji Doki, Hiroshi Tadano, Koji Shiozaki, Yasuki Kanazawa
Publikováno v:
ICIT
This paper aims to propose a control method of a high efficiency electric vehicles(EVs) drive motor and to verify its effectiveness. One of the ways to extend the driving distance is to improve the efficiency of the motor control system. However, exi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c67ce930397e7eece3aa659971694d0
https://doi.org/10.1109/icit46573.2021.9453618
https://doi.org/10.1109/icit46573.2021.9453618
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We have investigated AlGaN/GaN high-electron mobility transistors (HEMTs) with a high κ gate dielectric using hafnium silicate (HfSiOx). The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma enhanced atomic layer deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc1e5aebf355d1efbfb568eff4961bb
https://doi.org/10.1117/12.2577403
https://doi.org/10.1117/12.2577403
Publikováno v:
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).
GaN power conversion circuits need to avoid overheating. This paper describes the design of inverter circuits including GaN power devices, focusing on dual cooling systems. and proposes DC-DC converter circuit which achieves the operation of up to 13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49eed06a4b3725e8946dd247b990fecb
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215918
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215918
Autor:
Daigo Kikuta, Kenji Shiraishi, Atsushi Oshiyama, Koji Shiozaki, Kenta Chokawa, Tetsu Kachi, Tetsuo Narita
Publikováno v:
Physical Review Applied. 14
We report density-functional calculations that clarify the atomic and electronic structures of the oxygen vacancy ${V}_{\mathrm{O}}$ in amorphous $({\mathrm{Al}}_{2}{\mathrm{O}}_{3}{)}_{1\ensuremath{-}x}({\mathrm{Si}\mathrm{O}}_{2}{)}_{x}$ mixed oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a83976865731cfbf72fe314c397b1d3
https://doi.org/10.1103/physrevapplied.14.014034
https://doi.org/10.1103/physrevapplied.14.014034