Zobrazeno 1 - 10
of 221
pro vyhledávání: '"Koji SUEOKA"'
Autor:
Eiji Kamiyama, Koji Sueoka
Publikováno v:
AIP Advances, Vol 14, Iss 7, Pp 075217-075217-10 (2024)
In this study, we revisit the oxidation reactions of a single-crystal silicon wafer and compare the reported crystal structures of the formed oxides with the original diamond structure of single-crystal silicon. It is commonly assumed that interstiti
Externí odkaz:
https://doaj.org/article/75973c4b47ba470a8378e7dc8958af1c
Autor:
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Sho Nagatomo, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita
Publikováno v:
Crystals, Vol 14, Iss 9, p 748 (2024)
The surface recrystallization model of the fully amorphized C3H5-molecular-ion-implanted silicon (Si) substrate is investigated. Transmission electron microscopy is performed to observe the amorphous/crystalline interface near the C3H5-molecular-ion-
Externí odkaz:
https://doaj.org/article/07fe0759e4b44756b9bb841d8deaa157
Autor:
Eiji Kamiyama, Koji Sueoka
Publikováno v:
AIP Advances, Vol 13, Iss 8, Pp 085224-085224-6 (2023)
A novel method for estimating the elastic modulus of doped semiconductors using ab initio calculation is demonstrated for a Si crystal. The elastic modulus of various materials basically depends on lattice constants on which dependence is shown by ab
Externí odkaz:
https://doaj.org/article/27808c436e1c4b15b9a145d67f7ecf26
Autor:
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita
Publikováno v:
Crystals, Vol 14, Iss 2, p 112 (2024)
In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission elec
Externí odkaz:
https://doaj.org/article/a8bb5c1b932441e8b25416d9901fe0d9
Autor:
Ayumi Onaka-Masada, Ryosuke Okuyama, Satoshi Shigematsu, Hidehiko Okuda, Takeshi Kadono, Ryo Hirose, Yoshihiro Koga, Koji Sueoka, Kazunari Kurita
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1200-1206 (2018)
Gettering sinks for metallic impurities formed by carbon-cluster ion implantation in epitaxial silicon wafers have been investigated using technology computer-aided design and atom probe tomography (APT). We found that the defects formed by carbon-cl
Externí odkaz:
https://doaj.org/article/27b63c310e5b456287a39010d802efb6
Autor:
Kai TADANO, Koji SUEOKA
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 84, Iss 858, Pp 17-00542-17-00542 (2018)
To apply the germanium (Ge) thin film for various electronic devices, energy band structure should be controlled by carbon (C) and/or Tin (Sn) doping. It is important to understand the stable atomic configurations of C and Sn atoms near the (001) sur
Externí odkaz:
https://doaj.org/article/fdd32e36d9ea46528f1cd0811de19e03
Publikováno v:
AIP Advances, Vol 5, Iss 1, Pp 017127-017127-10 (2015)
A method is described to estimate the temperature dependent interaction between two uncharged point defects in Si based on DFT calculations. As an illustration, the formation of the uncharged di-vacancy V2 is discussed, based on the temperature depen
Externí odkaz:
https://doaj.org/article/5a711f7dc2a24a508cc4b5ccae09f5b4
Autor:
Takahiro Nagasawa, Koji Sueoka
Publikováno v:
Advances in Condensed Matter Physics, Vol 2011 (2011)
The initial stage of oxidation of an Si (110)-(1 × 1) surface was analyzed by using the first-principles calculation. Two calculation cells with different surface areas were prepared. In these cells, O atoms were located at the Si–Si bonds in the
Externí odkaz:
https://doaj.org/article/22bf5868dac2464789ce428d9c5b20df
Autor:
Seiji Shiba, Koji Sueoka
Publikováno v:
Advances in Condensed Matter Physics, Vol 2011 (2011)
The crack propagation from the indent introduced with a Vickers hardness tester at room temperature and the dislocation nucleation from the cracks at 900°C inside lightly boron (B), heavily B, or heavily arsenic (As) doped Czochralski (CZ) Si wafers
Externí odkaz:
https://doaj.org/article/5c0c11c719be4a00b88507c1ef077f8c
Publikováno v:
Advances in Materials Science and Engineering, Vol 2009 (2009)
The gettering of 4th row element impurities (K, Ca, 3d transition metals, and Zn) in Si crystals by dopant atoms was systematically investigated by first-principles calculation through evaluation of the diffusion barrier and the binding energy. The d
Externí odkaz:
https://doaj.org/article/9ad83976e5d7481394f673a8c897cb15