Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Koji Nagahiro"'
Autor:
Takahiro Nagata, Koji Nagahiro, Hiroshi Iwai, Takashi Shiozawa, Parhat Ahmet, Kazuo Tsutsui, Kuniyuki Kakushima, Toyohiro Chikyow
Publikováno v:
Microelectronic Engineering. 85:1642-1646
Electrical and structural properties of Ni silicide films formed at various temperatures ranged from 200^oC to 950^oC on both heavily doped n^+ and p^+ Si substrates were studied. It was found that surface morphology as well as the sheet resistance p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f77159b4085bc8023c400606961840
https://doi.org/10.1016/j.mee.2008.04.001
https://doi.org/10.1016/j.mee.2008.04.001
Autor:
Takashi Shiozawa, Koji Nagahiro, Parhat Ahmet, Hiroshi Iwai, Kuniyuki Kakushima, Yasutoshi Okuno, Ruifei Xiang, Kazuo Tsutsui, Michikazu Matsumoto, Masafumi Kubota
Publikováno v:
Microelectronic Engineering. 85:315-319
The annealing conditions causing an irregular peak in sheet resistance of nickel silicides are investigated. It is found that the irregular rise in sheet resistance occurs at a critical temperature of 750-775^oC as a result of agglomeration related t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b660ba08ec4a9d0d0a0c28d21590974d
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100560055
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100560055
Autor:
Nobuyuki Urushihara, Takashi Shiozawa, Kuniyuki Kakushima, Parhat Ahmet, Koji Nagahiro, Yoshihisa Ohishi, Kazuo Tsutsui, Hiroshi Iwai, Mineharu Suzuki
Publikováno v:
Microelectronic Engineering. 85:2000-2004
The direct deposition of a thin Al or B layer at Ni/Si interface was proposed as a new method to solve a problem of degraded thermal stability of Ni silicide on heavily doped N^+-Si substrates. Significant improvement of thermal stability evaluated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c1cf07b5787f0c6d460308da8d92012
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100588871
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100588871
Autor:
Koji Nagahiro, Hiroshi Iwai, Parhat Ahmet, Takashi Shiozawa, Kazuo Tsutsui, Kuniyuki Kakushima
Publikováno v:
ECS Transactions. 11:207-213
A new processe to improve thermal stability of Ni silicide, so called PSMD (post silicidation metal doping) in which additive metals were introduced to pre-formed NiSi was proposed. In situ deposition of thin Hf or Pt layer on the NiSi layer resulted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45c6220d4aa9b51c6b4f4762ef9cbf99
https://doi.org/10.1149/1.2778378
https://doi.org/10.1149/1.2778378
Autor:
Koji Nagahiro, Parhat Ahmet, Kazuo Tsutsui, Takahiro Nagata, Toyohiro Chikyow, Hiroshi Iwai, Takashi Shiozawa, Kuniyuki Kakushima
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
Ni silicide films were formed on both heavily doped n+ and p+ Si substrates at various temperatures ranged from 200°C to 950°C and its electrical and structural properties were studied. It was found that the phase transition temperature from NiSi p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeecb7da2704e0154812f8a1445db7aa
https://doi.org/10.1109/icsict.2008.4734794
https://doi.org/10.1109/icsict.2008.4734794
Autor:
Koji Nagahiro, Atsuo Takanishi, Hiroyuki Ishii, Kazuyuki Hatake, Yohan Noh, Jorge Solis, Yu Ogura
Publikováno v:
IROS
Airway management is provided by emergency medical technicians or anesthetists in order to save unconscious patients who are unable to breathe. Even though it is a basic technique, many accidents may occur when the procedure is not provided followed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1339b639a28a341d83b0adf8a371ae4
https://doi.org/10.1109/iros.2007.4399580
https://doi.org/10.1109/iros.2007.4399580
Autor:
Takashi Shiozawa, Parhat Ahmet, Kuniyuki Kakushima, Koji Nagahiro, Kazuo Tsutsui, Hiroshi Iwai, Michikazu Matsumoto, Yasutoshi Okuno, Ruifei Xiang, Masafumi Kubota
Publikováno v:
2006 International Workshop on Junction Technology.
NiSi is a promising material on salicide process. However, the thermal stability of NiSi is still a significant problem. Degradation in sheet resistance of Ni silicide is originated from phase transition from NiSi to NiSi 2 and/or agglomeration of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6069b3fcf362a37bafa513a00f26e53c
https://doi.org/10.1109/iwjt.2006.220889
https://doi.org/10.1109/iwjt.2006.220889
Autor:
Mineharu Suzuki, Nobuaki Urushihara, Hiroshi Iwai, Koji Nagahiro, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshihisa Ohishi, Takashi Shiozawa
Publikováno v:
ECS Meeting Abstracts. :677-677
A new method is proposed to address the degradation of thermal stability in Ni silicide on heavily doped N-type Si substrates. Layered deposition of Al or B at the Ni/Si interface prior to silicidation was found to improve the thermal stability of Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38dbed7257d650e2c8a3616fe2752aba
https://doi.org/10.1149/ma2008-01/16/677
https://doi.org/10.1149/ma2008-01/16/677