Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Koji Masuzaki"'
Autor:
Takashi Hase, Hiroshi Sunamura, Koji Masuzaki, Koichi Takeda, Akira Tanabe, Akira Mitsuiki, Kazuya Uejima, M. Narihiro, N. Furutake, Yoshihiro Hayashi, Makoto Ueki
Publikováno v:
IEEE Transactions on Electron Devices. 64:419-426
A low-power 2-Mb Resistance random access memory (ReRAM) macro is developed in a 90-nm CMOS platform with a 3-nm-thick TaO x /Ta2O5 switching layer of the active area of $0.01~\mu \text{m}^{2}$ . Instability of the ON-state minority bits degrades the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::539592b8fcea8a9c3d972b2059947623
https://doi.org/10.1109/ted.2016.2639283
https://doi.org/10.1109/ted.2016.2639283
Publikováno v:
Japanese Journal of Applied Physics. 43:7843-7847
Hafnium silicate films (HfSiO) were studied to assess the origin of the flatband voltage (Vfb) shift relative to SiO2. We systematically investigated its dependence on the structure of the film stack and the gate electrodes. Our experimental results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1379861e77353c4e3b2db650248cde1
https://doi.org/10.1143/jjap.43.7843
https://doi.org/10.1143/jjap.43.7843
Electron energy-loss spectroscopy analysis of the electronic structure of nitrided Hf silicate films
Publikováno v:
Applied Physics Letters. 84:3672-3674
We have shown, using electron energy-loss spectroscopy, that incorporating N into a Hf silicate film reduces the band gap. We also experimentally clarified that the Hf atoms in the film are coordinated by N atoms, and we used ab initio electronic str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683469b168bdbed0843342d5e54155a6
https://doi.org/10.1063/1.1738948
https://doi.org/10.1063/1.1738948
Autor:
Ayuka Morioka, Toshiyuki Iwamoto, M. Terai, Koji Masuzaki, Taeko Ikarashi, Yukishige Saito, Shinji Fujieda, Heiji Watanabe, Motofumi Saitoh, Hirohito Watanabe, Nobuyuki Ikarashi, Toru Tatsumi, Makoto Miyamura, Koji Watanabe, Takashi Ogura, Yuko Yabe
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab2328f44004761bddbf6cde8823f0cd
https://doi.org/10.7567/ssdm.2004.b-1-5
https://doi.org/10.7567/ssdm.2004.b-1-5
Autor:
Mitsuhiro Togo, Koji Masuzaki, Tohru Mogami, Toru Tatsumi, N. Ikezawa, Koji Watanabe, M. Terai, Toyoji Yamamoto
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3abbdfb07e44f40192226e0a00abff01
https://doi.org/10.7567/ssdm.2002.c-7-3
https://doi.org/10.7567/ssdm.2002.c-7-3
Autor:
Koji Masuzaki, Nobuyuki Ikarashi
Publikováno v:
Journal of Applied Physics. 109:063506
Transmission electron microscopy (TEM) and ab initio calculations revealed that the Ni-Si reaction around 300 °C is significantly changed by adding Pt to Ni. TEM analysis clarified that NiSi2 was formed in a reaction between Ni thin film (∼1 nm) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da7fafeeb98cb6ff5acccf5a065f964
https://doi.org/10.1063/1.3560532
https://doi.org/10.1063/1.3560532
Publikováno v:
Journal of Applied Physics. 100:063507
We investigated the thermal stability of a N-incorporated amorphous Hf silicate film in terms of Hf diffusion in the film using high-angle annular-dark-field scanning transmission electron microscopy. We first examined HfxSi1−xO2 (x=0.5,1.0) films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab7d56a05d89d7f0ec4cefc3db0dfce4
https://doi.org/10.1063/1.2353262
https://doi.org/10.1063/1.2353262
Publikováno v:
Applied Physics Letters. 88:101912
Using high-angle annular-dark-field scanning transmission electron microscopy, we showed how annealing at 1000°C changes the chemical composition distribution at a HfO2∕SiO2 interface. The observed change in the distribution was analyzed in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b71a8f0e01917efeddacf6487b660bfb
https://doi.org/10.1063/1.2182023
https://doi.org/10.1063/1.2182023
Autor:
Toshiyuki Iwamoto, Takashi Ogura, Masayuki Terai, Hirohito Watanabe, Heiji Watanabe, Nobuyuki Ikarashi, Makoto Miyamura, Toru Tatsumi, Motofumi Saitoh, Ayuka Morioka, Koji Watanabe, Yukishige Saito, Yuko Yabe, Taeko Ikarashi, Koji Masuzaki, Yasunori Mochizuki, Tohru Mogami
Publikováno v:
Scopus-Elsevier
For 90 nm node poly-Si gated MISFETs with HfSiO (1.8 nm) insulator, a nearly symmetrical set of Vths for NFET and PFET: (0.38 V and -0.46 V, respectively) have been realized for low power device operation. The key technology is the suppression of Vth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ed135956eb14bb829b86b4a1c3eb87a
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644448947&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-17644448947&partnerID=MN8TOARS
