Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Koji Kaneyama"'
Autor:
Masaya Asai, Charles Pieczulewski, Masahiko Harumoto, Tanaka Yuji, Harold T. Stokes, Koji Kaneyama
Publikováno v:
SPIE Proceedings.
Currently, there are many developments in the field of EUV lithography that are helping to move it towards increased HVM feasibility. Targeted improvements in hardware design for advanced lithography are of interest to our group specifically for metr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41bcfe700007624a37d8636bd60e00e
https://doi.org/10.1117/12.2259994
https://doi.org/10.1117/12.2259994
Autor:
Isabelle Servin, G. Chamiot-Maitral, Ian Cayrefourcq, Raluca Tiron, Chalres Pieczulewski, Tanaka Yuji, Harold T. Stokes, Masaya Asai, Maxime Argoud, Guillaume Claveau, Koji Kaneyama, Masahiko Harumoto
Publikováno v:
SPIE Proceedings.
PS-b-PMMA block copolymer is a well-known DSA material, and there are many DSA patterning methods that make effective the use of such 1st generation materials. Consequently, this variety of patterning methods opens a wide array of possibilities for D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d163c668e58bfba9deacd6d5fa1009da
https://doi.org/10.1117/12.2257945
https://doi.org/10.1117/12.2257945
Autor:
Ahmed Gharbi, Raluca Tiron, Masaya Asai, Charles Pieczulewski, Tanaka Yuji, Isabelle Servin, Céline Lapeyre, Koji Kaneyama, Maxime Argoud, C. Monget, Masahiko Harumoto, Harold T. Stokes
Publikováno v:
SPIE Proceedings.
Directed Self-Assembly (DSA) is a well-known candidate for next generation sub-15nm half-pitch lithography. [1-2] DSA processes on 300mm wafers have been demonstrated for several years, and have given a strong impression due to finer pattern results.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d57765cf311a34a5eb6ea450c3a6d3
https://doi.org/10.1117/12.2219925
https://doi.org/10.1117/12.2219925
Autor:
Masaya Asai, Harold T. Stokes, Yan Thouroude, Charles Pieczulewski, Masahiko Harumoto, Koji Kaneyama
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
EUV lithography (EUVL) is well known to be a strong candidate for next generation, single exposure sub-30nm halfpitch lithography.[1] Furthermore, high-NA EUV exposure tool(s) released two years ago gave a strong impression by finer pattern results.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dae7e449ce935f440a962bfce39865ef
https://doi.org/10.1117/12.2218947
https://doi.org/10.1117/12.2218947
Autor:
Julius Joseph Santillan, Kentaro Matsunaga, Toshiro Itani, Gousuke Shiraishi, Koji Kaneyama, Hiroaki Oizumi, Kazuyuki Matsumaro
Publikováno v:
Journal of Photopolymer Science and Technology. 23:613-618
Extreme ultraviolet (EUV) lithography is the leading candidate for the manufacture of semiconductor devices at the hp 22 nm technology node and beyond. The Selete program covers the evaluation of manufacturability for the EUV lithography process. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81ed7475f5cb2847ab2e483aed5885db
https://doi.org/10.2494/photopolymer.23.613
https://doi.org/10.2494/photopolymer.23.613
Publikováno v:
Journal of Photopolymer Science and Technology. 23:687-691
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae7a4410ae41e51f99910ef6805c8e50
https://doi.org/10.2494/photopolymer.23.687
https://doi.org/10.2494/photopolymer.23.687
Autor:
Shinji Kobayashi, Hiroaki Oizumi, Koji Kaneyama, Toshihiro Itani, Julius Joseph Stantilan, Daisuke Kawamura
Publikováno v:
Journal of Photopolymer Science and Technology. 22:59-64
Significant progress has been made in the development of extreme ultraviolet lithography (EUVL). EUV resists continue to improve towards its targets for sensitivity, resolution limit, and line width roughness (LWR). An update to benchmark the latest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66c96f56b776f57d6be38f6ca72bb528
https://doi.org/10.2494/photopolymer.22.59
https://doi.org/10.2494/photopolymer.22.59
Publikováno v:
Journal of Photopolymer Science and Technology. 22:111-116
Non-chemically amplified negative resist for EUV lithography was designed and the resist property was studied. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on poly(4-hydroxystyrene) (PHS) derivatives. OH groups o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd643ad0b9aa031136a9e937634cffa6
https://doi.org/10.2494/photopolymer.22.111
https://doi.org/10.2494/photopolymer.22.111
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2261-2264
The dissolution characteristics of the resist film into alkaline developer have been investigated in order to understand inherent extreme ultraviolet (EUV) resist characteristics and improve resist performance. The combined increase in dissolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e0f9b85440a4498838a6b94f5e5bb2
https://doi.org/10.1116/1.2987959
https://doi.org/10.1116/1.2987959
Publikováno v:
Japanese Journal of Applied Physics. 47:4918-4921
Molecular resist of polyphenol was evaluated as an extreme-ultraviolet resist compared with a polymer resist of poly(tert-butoxycarbonylhydroxystyrene). X-ray reflectometry was used to determine the resist-film density and measurement accuracy was im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::167cc2c16d6622c8b2e93a2457335fd9
https://doi.org/10.1143/jjap.47.4918
https://doi.org/10.1143/jjap.47.4918