Zobrazeno 1 - 10
of 342
pro vyhledávání: '"Koji Eriguchi"'
Autor:
Yoshihiro Sato, Satoshi Shibata, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami, Keiichiro Urabe, Koji Eriguchi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 769-777 (2022)
In the design of ultralow leakage devices such as image sensors, it is necessary to understand the influence of low-density defects during plasma processing—plasma-induced physical damage (PPD)—on device performance. Defects created by plasma exp
Externí odkaz:
https://doaj.org/article/661e446e6a0d437eb4d0b4c71df305ab
Autor:
Nobuya Nakazaki, Haruka Matsumoto, Soma Sonobe, Takumi Hatsuse, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055027-055027-12 (2018)
Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate
Externí odkaz:
https://doaj.org/article/2f2c87cf1479491f8e1e9d43e3e971dc
Publikováno v:
Japanese Journal of Applied Physics. 62:SI1010
To investigate the electrical properties and degradation features of dielectric materials during plasma exposure, we developed an in situ impedance spectroscopy (IS) system. We applied the proposed system to monitor SiO2/Si structures exposed to Ar p
Autor:
Yoshihiro Sato, Satoshi Shibata, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami, Keiichiro Urabe, Koji Eriguchi
Publikováno v:
Journal of Vacuum Science & Technology B. 40:062209
Understanding the effects of defect creation during plasma exposure is crucial for designing future ultra-low leakage current devices. Created defects play a role as carrier conduction paths, leading to an increase in the p–n junction leakage curre
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 23, p233304-1-233304-18, 18p, 2 Diagrams, 1 Chart, 12 Graphs
Autor:
Yoshihiro Sato, Keiichiro Urabe, Takayoshi Yamada, Masashi Murakami, Masayuki Yamasaki, Koji Eriguchi, Nishimura Kazuko
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
Currently, silicon-based ultra-large-scale integrated circuits (ULSIs) are widely used in electronic devices. High-performance and high-density ULSIs are realized by scaling down the feature sizes of field-effect transistors. To manufacture leading-e
Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis
Publikováno v:
Journal of Applied Physics. 131:133302
Plasma process-induced damage (PID) to SiN dielectric films was investigated by using an impedance (admittance)-based technique. Multi-layered equivalent circuits were introduced to assign the spatial and energy distribution of defects created in the
Publikováno v:
IRPS
We propose a method to analyze the dielectric degradation and breakdown dynamics under electrical stressing on the basis of time-resolved impedance $Z(\omega, t)$ spectra-time-dependent impedance spectroscopy (TDIS). Nyquist plots of $Z(\omega, t)$ s
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 22, p223302-1-223302-20, 20p, 5 Diagrams, 1 Chart, 15 Graphs
Autor:
Masashi Murakami, Nishimura Kazuko, Takayoshi Yamada, Masayuki Yamasaki, Yoshihiro Sato, Koji Eriguchi, Keiichiro Urabe
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Precise control of low-density defect creation during plasma processing is critical for designing ultra-low leakage devices. Unlike conventional vertical defect creation mechanisms, the "stochastic lateral straggling" of incident particles during pla