Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Koichi Matsushima"'
Autor:
Keigo Takeda, Tomoaki Ide, Kazunori Koga, Daisuke Yamashita, Naho Itagaki, Hyunwoong Seo, Koichi Matsushima, Masaru Hori, Masaharu Shiratani
Publikováno v:
IEEE Transactions on Plasma Science. 45:323-327
We report densities and surface reaction probabilities of O and N atoms during sputter deposition of ZnInON films on ZnO templates, measured via vacuum ultraviolet absorption spectroscopy. O density is almost constant of $4.5 \times 10^{11}$ cm−3 i
Autor:
Kazunori Koga, Kazuya Iwasaki, Masaharu Shiratani, Naho Itagaki, Hyunwoong Seo, Koichi Matsushima, Nanoka Miyahara, Daisuke Yamashita
Publikováno v:
MRS Advances. 2:277-282
We have fabricated ZnInON (ZION), which is a pseudo-binary alloy of wurtzite ZnO and wurtzite InN and has a tunable band gap over the entire visible spectrum and a high optical absorption coefficient of 105 cm-1. ZION films grow two dimensionally at
Autor:
Daisuke Yamashita, Naho Itagaki, Masaharu Shiratani, Kazuya Iwasaki, Kazunori Koga, Koichi Matsushima, Hyunwoong Seo
Publikováno v:
MRS Advances. 2:265-270
ZnO films were fabricated by RF magnetron sputtering with nitrogen mediated crystallization (NMC) under various gas pressures. X-ray diffraction measurements show that the NMC-ZnO films are highly crystalline regardless of the gas pressure, and the f
Autor:
Naho Itagaki, Koichi Matsushima, Masaharu Shiratani, Hyunwoong Seo, Tomoaki Ide, Kazunori Koga, Daisuke Yamashita
Publikováno v:
MRS Advances. 1:115-119
We study effects of deposition temperature on growth mode and surface morphology of hetero-epitaxial (ZnO)x(InN)1-x (ZION) films on ZnO templates. ZION films deposited at low temperature of RT-250oC grow two dimensionally, whereas ZION films deposite
Autor:
Masaharu Shiratani, Tomoaki Ide, Hyunwoong Seo, Koichi Matsushima, Ryota Shimizu, Kazunori Koga, Naho Itagaki, Daisuke Yamashita
Publikováno v:
Thin Solid Films. 587:106-111
We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
We have studied effects of deposition temperature on electrical properties of (ZnO) x (InN) 1−x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs
Autor:
Ryota Shimizu, Kazunori Koga, Hyunwoong Seo, Koichi Matsushima, Naho Itagaki, Daisuke Yamashita, Masaharu Shiratani, Tomoaki Ide
Publikováno v:
MRS Proceedings. 1741
We succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnInON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage
Autor:
Tomoaki Ide, Koichi Matsushima, Ryota Shimizu, Masaharu Shiratani, Hyunwoong Seo, Daisuke Yamashita, Naho Itagaki, Kazunori Koga
Publikováno v:
MRS Proceedings. 1741
Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of “nitrogen mediated crystallization (NMC) method”, where the crystal nucleation and growth are controlled by absorbed nitrogen
Errata: Model for thickness dependence of mobility and concentration in highly conductive zinc oxide
Autor:
David C. Look, Kevin D. Leedy, Arnold Kiefer, Bruce Claflin, Naho Itagaki, Koichi Matsushima, Iping Suhariadi
Publikováno v:
Optical Engineering. 56:049801
Publikováno v:
Bulletin of the Chemical Society of Japan. 73:2231-2235
A charge-transfer complex of DAP with F4TCNQ has been obtained by electrochemical reduction of F4TCNQ in acetonitrile in the presence of DAP·BF4. The crystal comprises segregated one-dimensional columns of donors and acceptors with CH3CN as the crys