Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Koichi Kanzaki"'
Publikováno v:
The Proceedings of the Symposium on Stirlling Cycle. :101-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2875d24d1ea45debd4ed545e20cddbf0
https://doi.org/10.1299/jsmessc.2011.14.101
https://doi.org/10.1299/jsmessc.2011.14.101
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B. 77:1026-1030
SATOYAMA CLUB demonstrated of a new energy system aimed for utilization of the woody biomass in the Expo '70 Commemorative Park (Suita-shi, Osaka) from 2005. And, in SUCTION, the development of the indirect heating type Stirling engine that used ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97697c3c817c2a91552de45709721ddb
https://doi.org/10.1299/kikaib.77.1026
https://doi.org/10.1299/kikaib.77.1026
Publikováno v:
The Proceedings of the National Symposium on Power and Energy Systems. :445-448
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::540bdd922dc1be9df2e0efde2921382d
https://doi.org/10.1299/jsmepes.2010.15.445
https://doi.org/10.1299/jsmepes.2010.15.445
Autor:
H. Hayashida, K. Maeguchi, Fumiyoshi Matsuoka, Hiroshi Iwai, Yoshiaki Toyoshima, Koichi Kanzaki
Publikováno v:
IEEE Transactions on Electron Devices. 37:1496-1503
The analysis indicates that a thinner gate oxide nMOSFET shows smaller degradation. Mechanisms for the smaller degradation were analyzed using a simple degraded MOSFET model. It was found that the number of the generated interface states is defined u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f1807af6876e0296c63c9d674b9f880
https://doi.org/10.1109/16.106245
https://doi.org/10.1109/16.106245
Autor:
Fumiyoshi Matsuoka, Koichi Kanzaki, K. Maeguchi, Hiroshi Iwai, H. Itoh, T. Nakakubo, K. Hama, R. Nakata
Publikováno v:
IEEE Transactions on Electron Devices. 37:562-568
Experiments have shown that the electromigration reliability for conventional nonfilled via holes decreases with via hole diameter reduction. Tungsten-filled via hole reliability, however, is independent of the via hole diameter and improves signific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb97d6432f6cb420e6d1e3b3d52d91ec
https://doi.org/10.1109/16.47758
https://doi.org/10.1109/16.47758
Publikováno v:
1988. Proceedings., Fifth International IEEE VLSI Multilevel Interconnection Conference.
The reliability of a via hole filling structure using selective tungsten CVD by a cold-wall reactor using WF/sub 6/ and SiH/sub 4/ has been studied. It has been experimentally determined that the reliability for the electromigration of a tungsten-fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf7dcd9e07e300faba780a25afe7d8e
https://doi.org/10.1109/vmic.1988.14230
https://doi.org/10.1109/vmic.1988.14230
Publikováno v:
The Proceedings of the Symposium on Stirlling Cycle. :31-32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4328618380f82a2a4772e880da5d9d
https://doi.org/10.1299/jsmessc.2010.13.31
https://doi.org/10.1299/jsmessc.2010.13.31
Publikováno v:
The Proceedings of the Symposium on Stirlling Cycle. :103-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a81e48a14c823ef2d26d8047a4674800
https://doi.org/10.1299/jsmessc.2005.9.103
https://doi.org/10.1299/jsmessc.2005.9.103
Autor:
Masanori Sakamoto, Koichi Kanzaki
Publikováno v:
SID Symposium Digest of Technical Papers. 32:242
Low temperature p-Si technology road map is proposed and discussed focusing on the evollution of TFT performance and integration density. Integration of DAC and control circuits will realize lighter-weight and lower cost display, where, higher resolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ef47553ec7b3aa1902ef1ae3bb255c6
https://doi.org/10.1889/1.1831841
https://doi.org/10.1889/1.1831841
Autor:
Wataru Miyao, Koichi Kanzaki
Publikováno v:
Japanese Journal of Applied Physics. 15:1113-1116
The noise power spectrum of high purity p-InSb has been measured at 77K. Generation-recombination (g-r) noise was found dominant in the 1–10 kHz frequency range. The measured values of g-r noise power are one or two orders of magnitude smaller than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3eeb26aa73bf3f8cdff5ae4d5af317
https://doi.org/10.1143/jjap.15.1113
https://doi.org/10.1143/jjap.15.1113