Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Koichi Kamisako"'
Publikováno v:
Journal of Crystal Growth. 463:67-71
We investigated a method of controlling the crystallinity of an n-type SiC (n-SiC) layer grown on a p-type 4°-off-axis Si(1 1 1) (p-Si) substrate by our sputtering method for use as SiC/Si devices. An n-SiC layer grown on p-Si at 810 °C exhibits co
Autor:
Hiroaki Sato, Ali Hamdi, Hidenori Suzuki, Marwan Dhamrin, Koichi Kamisako, Katsuhiko Katsuma, Kato Kuniyasu, Abdullah Uzum, Saori Nagashima, Shota Suzuki, S. Yoshiba
Publikováno v:
Solar Energy Materials and Solar Cells. 109:288-293
Diffusion parameters including the ambient gas, temperature, and time for the phosphorus diffusion process were examined and optimized for selective emitter solar cell processing using a novel screen-printable phosphorus paste. The carrier lifetime o
Publikováno v:
Current Applied Physics. 10:S237-S240
Hydrogenated amorphous silicon (a-Si:H) thin films as passivation layer are deposited at various substrate temperatures using the remote-plasma-enhanced chemical vapor deposition method. Their properties are investigated and a method for further impr
Autor:
Koichi Kamisako, Minsung Jeon
Publikováno v:
Current Applied Physics. 10:S191-S195
Tin-catalyzed silicon nanowires (Sn-catalyzed SiNWs) are synthesized using the hydrogen radical-assisted deposition method and the prepared samples are examined for application of solar cells. Voluminous SiNWs with various growth directions are synth
Autor:
H. Sugimoto, Koichi Kamisako, Michio Tajima, Tadashi Saitoh, I. Yamaga, K. Yamada, N. Araki, Marwan Dhamrin
Publikováno v:
Solar Energy Materials and Solar Cells. 93:1139-1142
This paper, under the NEDO project, aims at technology development of high-quality, n-type multicrystalline Si wafers. The targets of the technology development are to realize a high minority-carrier lifetime of 1 ms and to apply for a commercial sol
Autor:
Koichi Kamisako, Minsung Jeon
Publikováno v:
Journal of Alloys and Compounds. 476:84-88
Large quantities of aluminum-catalyzed silicon nanowires (SiNWs) after hydrogen radical treatment were successfully synthesized at lower temperatures than aluminum–silicon eutectic temperature using the hydrogen radical-assisted deposition method.
Autor:
Minsung Jeon, Koichi Kamisako
Publikováno v:
Metals and Materials International. 15:83-87
Silicon nanowires (SiNWs) catalyzed by gold (Au) nanoparticles were synthesized from silane gas by the hydrogen radical-assisted deposition method. The gold particles used as catalyst were fabricated from an evaporated Au film on a glass substrate by
Publikováno v:
Journal of Industrial and Engineering Chemistry. 14:836-840
Gallium-catalyzed silicon nanowires (SiNWs) were synthesized by the hydrogen radical-assisted deposition method. The voluminous quantities of SiNWs with various crystal growth directions were synthesized and their characteristics were estimated by us
Autor:
Koichi Kamisako, Minsung Jeon
Publikováno v:
Journal of Nanoscience and Nanotechnology. 8:5188-5192
Indium (In) catalyzed silicon nanowires were synthesized by the hydrogen radical-assisted deposition method. The In nanoparticles used as catalyst were fabricated from indium oxide film as metal oxide film at various temperatures by hydrogen radical
Autor:
Jong Ho Lee, Duck-Rye Chang, Tae Won Kim, Chaehwan Jeong, Bum-Ho Choi, Koichi Kamisako, Seongjae Boo, Ho-Sung Kim
Publikováno v:
Journal of Nanoscience and Nanotechnology. 8:5521-5526
Intrinsic and phosphorus-doped hydrogenated microcrystalline silicon (microc-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition (ICP-CVD) method. Structural, electrical and optical properties of these films were stud