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Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II–VI compound superlattices on InP substrates
Autor:
Ichirou Nomura, Tomohiro Yamazaki, Koichi Hayami, Masaki Kato, Katsumi Kishino, Hiroaki Hayashi
Publikováno v:
Journal of Crystal Growth. :273-276
MgSe/BeZnSeTe II–VI compound superlattices (SLs) were grown on InP substrates by molecular beam epitaxy (MBE). In the growth, Zn molecular beam irradiation was performed at each hetero-interface between MgSe and BeZnSeTe layers to suppress in-plane
Publikováno v:
physica status solidi (b). 243:924-928
Aging characteristics of BeZnSeTe yellow light emitting diodes (LEDs) fabricated on InP substrates by molecular beam epitaxy were investigated under direct current injections at room temperature. It was shown that the decay speed of the light output