Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Kohlenstoffdotierung"'
Autor:
Pohl, D., Solovyev, V. V., Röher, S., Gärtner, J., Kukushkin, I. V., Mikolajick, Thomas, Großer, A., Schmult, S.
The predicted acceptor impurity nature of carbon in hexagonal GaN grown by molecular-beam epitaxy (MBE) is revisited spectroscopically in the energy range between 1.6 and 3.5 eV. Photoluminescence (PL) spectra from ultra-pure GaN and material doped w
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81201
https://tud.qucosa.de/api/qucosa%3A81201/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A81201/attachment/ATT-0/
Autor:
I. V. Kukushkin, Jan Gärtner, Thomas Mikolajick, V. V. Solovyev, Andreas Großer, Diana Pohl, S. Röher, S. Schmult
Publikováno v:
Journal of Crystal Growth. 514:29-35
The predicted acceptor impurity nature of carbon in hexagonal GaN grown by molecular-beam epitaxy (MBE) is revisited spectroscopically in the energy range between 1.6 and 3.5 eV. Photoluminescence (PL) spectra from ultra-pure GaN and material doped w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b86acb2adb6c5240d3f9e4336ac17a35
https://doi.org/10.1016/j.jcrysgro.2019.02.041
https://doi.org/10.1016/j.jcrysgro.2019.02.041
Publikováno v:
Materials Science and Engineering: B. 21:304-306
Modulation doped field effect transistors (MODFETs) with a p + -GaAs gate structure were fabricated from AlGaInP/ GaInAs/GaAs heterostructures for the first time. Self-aligned devices with a gate length of 0.7 μm exhibit drain currents of 330 mA mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::863054b87819d60e9e28cc1bb921ad1f
https://doi.org/10.1016/0921-5107(93)90373-u
https://doi.org/10.1016/0921-5107(93)90373-u
Publikováno v:
Physical Review B. 63
Infrared- (IR) absorption measurements of localized vibrational modes (LVM's) show the presence of ${\mathrm{H}\ensuremath{-}\mathrm{C}}_{\mathrm{P}}$ pairs and isolated ${\mathrm{C}}_{\mathrm{P}}$ acceptors in semi-insulating epitaxial layers of InP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d388ebd20c43d49bffb3fac3805180b
https://doi.org/10.1103/physrevb.63.205307
https://doi.org/10.1103/physrevb.63.205307
Autor:
Davidson, B.R., Newman, R.C., Latham, C.D., Jones, R., Wagner, J., Button, C.C., Briddon, P.R.
Raman scattering from an as-grown or annealed AlAs carbon delta-doping superlattice reveals lines at 1752 and 1856 cm(-1) : the latter line shows the weaker intensity but has a resonant enhancement for incident light with an energy of 3 eV. These lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::c8ded6325da056ece5ba38a4b65c4aeb
https://publica.fraunhofer.de/handle/publica/194900
https://publica.fraunhofer.de/handle/publica/194900
Autor:
J. Wagner, Sven Öberg, R. Jones, C. C. Button, B. R. Davidson, R.C. Newman, Christopher D. Latham, Patrick R. Briddon
Heat treatment of heavily carbon doped AlAs and GaAs results in a loss of C(As) shallow acceptors. In Raman scattering experiments on annealed CBE grown GaAs with 12.C and 13.C isotopes, and MOVPE grown AlAs it is found that the loss of carriers is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6ae09b60d9663de1440626fedf73d65
https://publica.fraunhofer.de/handle/publica/192320
https://publica.fraunhofer.de/handle/publica/192320
Autor:
Christopher D. Latham, S.P. Westwater, B. R. Davidson, R.C. Newman, Sven Öberg, R. Jones, J. Wagner, Tim J. Bullough, T.B. Joyce
Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm -1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0ce54845d238e482a628fc24d516eed
http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-6783
http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-6783
Autor:
Pritchard, R.E., Newman, R.C., Wagner, J., Maier, M., Mazuelas, A., Lane, P.A., Martin, T., Whitehouse, C.R., Ploog, K.
The local environment of CdeepAs acceptors in IndeepxGadeep1-deepxAs has been determined from the localized vibrational modes (LVMs) of both isolated CdeepAs impurities and H-CdeepAs pairs using infrared (IR) absorption and Raman scattering technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::02019d7c5f70ca166ca3cfd036b740c2
https://publica.fraunhofer.de/handle/publica/186037
https://publica.fraunhofer.de/handle/publica/186037
We have grown layers of Ga1-x Inx As: C (x ~ 0.01) on (100) GaAs by molecular beam epitaxy. As C source a graphite filament was used. Structures coherent with the substrate were obtained by adjusting properly the In and C concentrations. With simulta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::0dbf262d7845fe1fbe9d10b60f5a8391
https://publica.fraunhofer.de/handle/publica/186336
https://publica.fraunhofer.de/handle/publica/186336
Autor:
Wagner, J., Pritchard, R.E., Davidson, B.R., Newman, R.C., Bullough, T.J., Joyce, T.B., Button, C., Roberts, J.S.
H-CdeepAs pairs in epitaxial layers of AlAs have been studied by local vibrational mode (LVM) Raman spectroscopy and complemented by infrared (IR) aborption measurements performed on the same samples. Inelastic light scattering by the symmetric A1hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::8e6db9cd429f123a536d6d18b9c34c32
https://publica.fraunhofer.de/handle/publica/186962
https://publica.fraunhofer.de/handle/publica/186962