Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kohji Tsunoda"'
Autor:
Kohji Tsunoda, Daisuke Matsunaga, Kazuhiro Eguchi, Katsuhiko Hieda, Yoshiaki Fukuzumi, Katsuaki Natori, Mitsuaki Izuha, Jun Lin
Publikováno v:
Applied Physics Letters. 76:2430-2432
Forming gas (3%H2+97%N2) anneals result in decomposition of SrRuO3 and increase the leakage current of the SrRuO3/(Ba, Sr)TiO3/SrRuO3 capacitor. However, we show that 0.5% O2 addition to the forming gas (3%H2+0.5%O2+96.5%N2) does not cause degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1039945e1b6b97399b7eaf3fea1378c
https://doi.org/10.1063/1.126366
https://doi.org/10.1063/1.126366
Autor:
Tsunetoshi Arikado, Hiroshi Tomita, Masahiro Kiyotoshi, Yutaka Ishibashi, Mitsuaki Izuha, Soichi Yamazaki, Syoko Niwa, Tomonori Aoyama, Junya Nakahira, Kazuhiro Eguchi, Kohji Tsunoda, Jun Lin, Katsuya Okumura, Katsuhiko Hieda, Akihiro Shimada, Yoshiaki Fukuzumi, Kenro Nakamura, Yusuke Kohyama, Masaaki Nakabayashi
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac423d3e11ab40e60348acbf00cc6dca
https://doi.org/10.7567/ssdm.1999.a-15-1
https://doi.org/10.7567/ssdm.1999.a-15-1
Publikováno v:
Applied Physics Letters. 91:223510
We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2∕TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f54d34f10c39def2e1fc362d3087ef4
https://doi.org/10.1063/1.2818691
https://doi.org/10.1063/1.2818691