Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Kohei Suda"'
Autor:
Shun Kobayashi, Makoto Aoki, Mitsuru Wakisaka, Teppei Kawamoto, Ryo Shirasaka, Kohei Suda, Donald A. Tryk, Junji Inukai, Toshihiro Kondo, Hiroyuki Uchida
Publikováno v:
ACS Omega, Vol 3, Iss 1, Pp 154-158 (2018)
Externí odkaz:
https://doaj.org/article/6072ace9c2df40c194a358ca51c6cbf6
Autor:
Shin-ichi Towata, Tatsuo Noritake, Satoshi Ogawa, Yuuki Nakanishi, Yasuhiro Sakuma, Shoji Tachiki, Toshiki Hirotomo, Kohei Suda
Publikováno v:
Journal of Alloys and Compounds. 938:168594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9292997f1c590a02084bbda9e76cadcf
https://doi.org/10.1016/j.jallcom.2022.168594
https://doi.org/10.1016/j.jallcom.2022.168594
Autor:
Kazutoshi Yoshioka, Kohei Suda, Gai Ogasawara, Atsushi Ogura, Yuki Takahashi, Ryo Yokogawa, Ichiro Hirosawa
Publikováno v:
ECS Transactions. 98:481-490
Ge1-x Sn x is expected to be a new material for next-generation electronic and thermoelectric device because it has higher carrier mobilities and lower thermal conductivity than pure Si and Ge. Here, strain is an important factor for designing electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff5818e03d63ccc9523aa4237e97086e
https://doi.org/10.1149/09805.0481ecst
https://doi.org/10.1149/09805.0481ecst
Autor:
Kohei Suda, Sumitaka Watanabe, Arata Chisato, Akihiro Iiyama, Tetsuro Tano, Amemiya Isao, Masashi Matsumoto, Makoto Uchida, Hideto Imai, Ryo Kobayashi, Katsuyoshi Kakinuma
Publikováno v:
ACS Applied Materials & Interfaces. 11:34957-34963
Semiconducting oxide nanoparticles are strongly influenced by surface-adsorbed molecules and tend to generate an insulating depletion layer. The interface between a noble metal and a semiconducting oxide constructs a Schottky barrier, interrupting th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44ad9beb4dd0989a7a6e637fde9102f5
https://doi.org/10.1021/acsami.9b11119
https://doi.org/10.1021/acsami.9b11119
Publikováno v:
ECS Transactions. 86:329-336
Background and purpose Ge1-xSnx has a higher electron and hole mobility than Si, which attract much attention as a next-generation channel material [1]. Moreover, it is expected further mobility enhancement by applying appropriate strain. However, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f88425bf72a4e9173b6d5efe107f7e0
https://doi.org/10.1149/08607.0329ecst
https://doi.org/10.1149/08607.0329ecst
Publikováno v:
ECS Transactions. 86:411-418
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::735aa7d3343a211581165b80f6018026
https://doi.org/10.1149/08607.0411ecst
https://doi.org/10.1149/08607.0411ecst
Autor:
Ichiro Hirosawa, Kohei Suda, Hideto Imai, Satoshi Yasuno, Takeshi Watanabe, Junji Inukai, Teppei Kawamoto, Masashi Matsumoto, Tomoyuki Koganezawa
Publikováno v:
ECS Meeting Abstracts. :1489-1489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33acce56c8e85ee2a1df653cc670c4b6
https://doi.org/10.1149/ma2021-02501489mtgabs
https://doi.org/10.1149/ma2021-02501489mtgabs
Autor:
Hiroshi Sudoh, Masato Ishikawa, Yoshio Ohshita, Kohei Suda, Atsushi Ogura, Naomi Sawamoto, Hideaki Machida, Ichiro Hirosawa
Publikováno v:
Journal of Crystal Growth. 468:605-609
In this paper, we propose a new method of using H2 supply in the atmosphere to increase Sn concentration in a Ge1−xSnx film epitaxially grown on a Ge substrate using MOCVD (metal organic chemical vapor deposition). H2 supplied in the atmosphere acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87dc5780800d6c64906462eebf2f9540
https://doi.org/10.1016/j.jcrysgro.2016.12.085
https://doi.org/10.1016/j.jcrysgro.2016.12.085
Autor:
Katsuyoshi, Kakinuma, Kohei, Suda, Ryo, Kobayashi, Tetsuro, Tano, Chisato, Arata, Isao, Amemiya, Sumitaka, Watanabe, Masashi, Matsumoto, Hideto, Imai, Akihiro, Iiyama, Makoto, Uchida
Publikováno v:
ACS applied materialsinterfaces. 11(38)
Semiconducting oxide nanoparticles are strongly influenced by surface-adsorbed molecules and tend to generate an insulating depletion layer. The interface between a noble metal and a semiconducting oxide constructs a Schottky barrier, interrupting th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e09a5daee4600abb8a6503de269c250a
https://pubmed.ncbi.nlm.nih.gov/31490657
https://pubmed.ncbi.nlm.nih.gov/31490657
Autor:
Satoshi Yasuno, Kohei Suda, Teppei Kawamoto, Masashi Matsumoto, Junji Inukai, Tomoyuki Koganezawa, Ichiro Hirosawa, Hideto Imai, Takeshi Watanabe
Publikováno v:
Journal of The Electrochemical Society. 168:054506
We have developed an operando analytical system designed for the simultaneous measurements of the electrochemical reaction rate and the hard X-ray photoemission spectrum. In this system, a solution containing reactants was continuously supplied in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b45601cf0a59e4f330839ba62306c24
https://doi.org/10.1149/1945-7111/abf971
https://doi.org/10.1149/1945-7111/abf971