Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Koh Masahara"'
Autor:
Johji Nishio, Kazutoshi Kojima, Sadafumi Yoshida, Toshiyuki Ohno, Tetsuo Takahashi, Takaya Suzuki, Hirotaka Yamaguchi, Yuuki Ishida, Koh Masahara
Publikováno v:
Materials Science Forum. :447-450
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::214def19771df2bc3da4281efdcab9d4
https://doi.org/10.4028/www.scientific.net/msf.389-393.447
https://doi.org/10.4028/www.scientific.net/msf.389-393.447
Autor:
Takaya Suzuki, Koh Masahara, Junji Senzaki, Kazuo Arai, Masakazu Katsuno, Tetsuo Takahashi, Takaya Ohno, Johji Nishio, Kenji Fukuda, Yuuki Ishida, Kazutoshi Kojima, Sadafumi Yoshida, Tomoyuki Tanaka, Tatsuo Fujimoto, Noboru Ohtani
Publikováno v:
Materials Science Forum. :195-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f99da48124d9d40011c5804a53df1c
https://doi.org/10.4028/www.scientific.net/msf.389-393.195
https://doi.org/10.4028/www.scientific.net/msf.389-393.195
Autor:
Kazutoshi Kojima, Johji Nishio, Yuuki Ishida, Tomoyuki Tanaka, Mitsuhiro Kushibe, Koh Masahara, Sadafumi Yoshida, Tetsuo Takahashi, Kazuo Arai, Toshiyuki Ohno, Takaya Suzuki
Publikováno v:
Materials Science Forum. :215-218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280963ba179db47f8c7af215a0b755d8
https://doi.org/10.4028/www.scientific.net/msf.389-393.215
https://doi.org/10.4028/www.scientific.net/msf.389-393.215
Autor:
Tetsuo Takahashi, Kazutoshi Kojima, Takaya Suzuki, Takaya Ohno, Johji Nishio, Mitsuhiro Kushibe, Kazuo Arai, Sadafumi Yoshida, Koh Masahara, Tomoyuki Tanaka, Yuuki Ishida
Publikováno v:
Materials Science Forum. :179-182
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f33abafadd471b68c25d28164e24ac2
https://doi.org/10.4028/www.scientific.net/msf.389-393.179
https://doi.org/10.4028/www.scientific.net/msf.389-393.179
Autor:
Kenji Fukuda, Yuuki Ishida, Toshiyuki Ohno, Seiji Suzuki, Takaya Suzuki, Sadafumi Yoshida, Tomoyuki Tanaka, Kazuo Arai, Shinsuke Harada, Kazutoshi Kojima, Mitsuhiro Kushibe, Tetsuo Takahashi, Junji Senzaki, Koh Masahara
Publikováno v:
Materials Science Forum. :1053-1056
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dfaec7b59d5551fd0a305dbaf557ce0
https://doi.org/10.4028/www.scientific.net/msf.389-393.1053
https://doi.org/10.4028/www.scientific.net/msf.389-393.1053
Autor:
Koh Masahara, Kazuo Arai, Hideo Ohno, Mitsuhiro Kushibe, Tomoyuki Tanaka, Kazutoshi Kojima, Tetsuo Takahashi, Takaya Suzuki, Yuuki Ishida, Sadafumi Yoshida
Publikováno v:
Materials Science Forum. :135-138
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3de33c9d81f098a90af6f7df184ed21
https://doi.org/10.4028/www.scientific.net/msf.353-356.135
https://doi.org/10.4028/www.scientific.net/msf.353-356.135
Autor:
Tetsuo Takahashi, Takahito Suzuki, Kazuo Arai, Takaya Ohno, Yuuki Ishida, Sadafumi Yoshida, Hajime Okumura, Koh Masahara, Tomoyuki Tanaka, Mitsuhiro Kushibe
Publikováno v:
Materials Science Forum. :1037-1040
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660825b8b1b4c78c7872fb8119e76d61
https://doi.org/10.4028/www.scientific.net/msf.338-342.1037
https://doi.org/10.4028/www.scientific.net/msf.338-342.1037
Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor
Autor:
Mitsuhiro Kushibe, Takaya Ohno, Sadafumi Yoshida, Koh Masahara, Hajime Okumura, Tomoyuki Tanaka, Tetsuo Takahashi, Kazuo Arai, Takahito Suzuki, Yuuki Ishida
Publikováno v:
Materials Science Forum. :169-172
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ba8a667d0f562f07ee177a4aad7df48
https://doi.org/10.4028/www.scientific.net/msf.338-342.169
https://doi.org/10.4028/www.scientific.net/msf.338-342.169
Autor:
Kazuo Arai, Sadafumi Yoshida, Toshiyuki Ohno, Takaya Suzuki, Mituhiro Kushibe, Koh Masahara, Tomoyuki Tanaka, Tetuo Takahashi, Kazutoishi Kojima, Yuuki Ishida
Publikováno v:
MRS Proceedings. 680
Growth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVD with SiH4–C3H8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c60696eea5828f3ce99c6345d5ee13b
https://doi.org/10.1557/proc-680-e9.2
https://doi.org/10.1557/proc-680-e9.2
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c9db9e9f3e27ac826ab41041065820
https://doi.org/10.7567/ssdm.2001.d-9-5
https://doi.org/10.7567/ssdm.2001.d-9-5