Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Kogo Sato"'
Publikováno v:
Solid-State Electronics. 21:513-518
Heavily arsenic implanted silicon layers are evaluated by measuring the “refreshtime” of dynamic type MOS memories. The dose range used for the fabrication is around 1.5×10 16 cm −2 due to the sheet resistivity and junction depth requirements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ddd1aa1e39f20f343248225889e3298
https://doi.org/10.1016/0038-1101(78)90020-5
https://doi.org/10.1016/0038-1101(78)90020-5
Publikováno v:
Solid-State Electronics. 9:771-781
From i.r. interference chart analysis of an epitaxial wafer made of silicon nn+ layers, it wasfound that: (a) the interference amplitude varies sensitively with impurity concentration of the substrate wafers; (b) the interference amplitude damps and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df9eac2937105d87bf761bd4c00cdf06
https://doi.org/10.1016/0038-1101(66)90117-1
https://doi.org/10.1016/0038-1101(66)90117-1
Autor:
Kogo Sato, Masami Tomono
Publikováno v:
Solid-State Electronics. 3:29-IN5
The emitter-current dependence of α cb of the p-n-p alloy transistor is affected by various factors. One of the important factors at low emitter-current densities is the ratio between donor concentration in base region and acceptor concentration in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74231f8c0ef68de9f88f98ed9b6bb025
https://doi.org/10.1016/0038-1101(61)90077-6
https://doi.org/10.1016/0038-1101(61)90077-6